Interfacial passivation mechanism of sulfide towards quantum dot-sensitized nanocrystalline thin films

	Interfacial passivation mechanism of sulfide towards quantum dot-sensitized nanocrystalline thin films
	Zhang, Jingbo 1; Sun, Chuanzhen 2,3,4; Li, Yajiao 1; Bai, Shouli 2; Luo, Ruixian 2; Chen, Aifan 2; Liu, Kun 1; Lin, Yuan 3
刊名	JOURNAL OF SOLID STATE ELECTROCHEMISTRY
	2017-03-01
卷号	21 期号:3 页码:883-889
关键词	Interfacial Modification Of Sulfide S2- Ion adsorptIon Zno Nanocrystalline Thin Films Conversion Efficiency Enhancement Quantum Dot-sensitized Solar Cell
英文摘要	We report on the interfacial passivation mechanism in CdSe quantum dot-sensitized ZnO nanocrystalline thin film, where different sulfide semiconductors (such as ZnS and CdS) and sulfide ions are used to modify ZnO nanocrystalline thin film before deposition of CdSe quantum dots (QDs). It is noticed that the highest light-to-electric conversion efficiency of CdSe quantum dot-sensitized ZnO nanocrystalline thin film solar cell is attained up to 4.18 % after CdS interfacial modification. Meanwhile, a simple treatment of ZnO nanocrystalline thin film in Na2S solution can also increase the conversion efficiency of CdSe quantum dot-sensitized solar cell up to 3.45 %. The electron transfer and recombination processes occurred in the interface of QD-sensitized nanocrystalline thin films with and without the different interfacial modifications are detected by measuring intensity modulated photovoltage spectroscopy and electrochemical impedance spectroscopy of solar cells. These results indicate that adsorption of S2- ions on the surface active sites of ZnO nanoparticles is the main reason for the conversion efficiency improvement due to the interfacial passivation of sulfide semiconductors.
语种	英语
内容类型	期刊论文
源URL	[http://ir.iccas.ac.cn/handle/121111/38224]
专题	化学研究所_光化学实验室
作者单位	1.Tianjin Normal Univ, Key Lab Inorgan Organ Hybrid Funct Mat Chem, Tianjin Key Lab Struct & Performance Funct Mol, Minist Educ,Coll Chem, Tianjin 300387, Peoples R China 2.Beijing Univ Chem Technol, State Key Lab Chem Resource Engn, Beijing 100029, Peoples R China 3.Chinese Acad Sci, Beijing Natl Lab Mol Sci, Key Lab Photochem, Inst Chem, Beijing 100190, Peoples R China 4.Shandong Acad Pharmaceut Sci, Jinan 250101, Peoples R China
推荐引用方式 GB/T 7714	Zhang, Jingbo,Sun, Chuanzhen,Li, Yajiao,et al. Interfacial passivation mechanism of sulfide towards quantum dot-sensitized nanocrystalline thin films[J]. JOURNAL OF SOLID STATE ELECTROCHEMISTRY,2017,21(3):883-889.
APA	Zhang, Jingbo.,Sun, Chuanzhen.,Li, Yajiao.,Bai, Shouli.,Luo, Ruixian.,...&Lin, Yuan.(2017).Interfacial passivation mechanism of sulfide towards quantum dot-sensitized nanocrystalline thin films.JOURNAL OF SOLID STATE ELECTROCHEMISTRY,21(3),883-889.
MLA	Zhang, Jingbo,et al."Interfacial passivation mechanism of sulfide towards quantum dot-sensitized nanocrystalline thin films".JOURNAL OF SOLID STATE ELECTROCHEMISTRY 21.3(2017):883-889.