Total ionizing dose effects in pinned photodiode complementary metal-oxide-semiconductor transistor active pixel sensor

doi:10.1088/1674-1056/27/10/104207

CORC > 新疆理化技术研究所 > 中国科学院新疆理化技术研究所 > 中国科学院特殊环境功能材料与器件重点试验室

	Total ionizing dose effects in pinned photodiode complementary metal-oxide-semiconductor transistor active pixel sensor
	Ma, LD (Ma, Lin-Dong)[ 1,2,3 ]; Li, YD (Li, Yu-Dong)[ 1,2 ]; Wen, L (Wen, Lin)[ 1,2 ]; Feng, J (Feng, Jie)[ 1,2 ]; Zhang, X (Zhang, Xiang)[ 1,2,3 ]; Wang, TH (Wang, Tian-Hui)[ 1,2,3 ]; Cai, YL (Cai, Yu-Long)[ 1,2,3 ]; Wang, ZM (Wang, Zhi-Ming)[ 1,2,3 ]; Guo, Q (Guo, Qi)[ 1,2 ]
刊名	CHINESE PHYSICS B
	2018
卷号	27 期号:10 页码:1-5
关键词	Cmos Active Pixel Sensor Dark Current Quantum Efficiency
ISSN号	1674-1056
DOI	10.1088/1674-1056/27/10/104207
英文摘要	A pinned photodiode complementary metal-oxide-semiconductor transistor (CMOS) active pixel sensor is exposed to Co-60 to evaluate the performance for space applications. The sample is irradiated with a dose rate of 50 rad (SiO2)/s and a total dose of 100 bad (SiO2), and the photodiode is kept unbiased. The degradation of dark current, full well capacity, and quantum efficiency induced by the total ionizing dose damage effect are investigated. It is found that the dark current increases mainly from the shallow trench isolation (STI) surrounding the pinned photodiode. Further results suggests that the decreasing of full well capacity due to the increase in the density, is induced by the total ionizing dose (TID) effect, of the trap interface, which also leads to the degradation of quantum efficiency at shorter wavelengths.
WOS记录号	WOS:000448162800002
内容类型	期刊论文
源URL	[http://ir.xjipc.cas.cn/handle/365002/5631]
专题	新疆理化技术研究所_中国科学院特殊环境功能材料与器件重点试验室新疆理化技术研究所_材料物理与化学研究室
通讯作者	Guo, Q (Guo, Qi)[ 1,2 ]
作者单位	1.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Peoples R China 2.Xinjiang Key Lab Elect Informat Mat & Device, Urumqi 830011, Peoples R China 3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
推荐引用方式 GB/T 7714	Ma, LD ,Li, YD ,Wen, L ,et al. Total ionizing dose effects in pinned photodiode complementary metal-oxide-semiconductor transistor active pixel sensor[J]. CHINESE PHYSICS B,2018,27(10):1-5.
APA	Ma, LD .,Li, YD .,Wen, L .,Feng, J .,Zhang, X .,...&Guo, Q .(2018).Total ionizing dose effects in pinned photodiode complementary metal-oxide-semiconductor transistor active pixel sensor.CHINESE PHYSICS B,27(10),1-5.
MLA	Ma, LD ,et al."Total ionizing dose effects in pinned photodiode complementary metal-oxide-semiconductor transistor active pixel sensor".CHINESE PHYSICS B 27.10(2018):1-5.