Radiation hardness of two CMOS prototypes for the ATLAS HL-LHC upgrade project

doi:10.1088/1748-0221/11/02/C02005

	Radiation hardness of two CMOS prototypes for the ATLAS HL-LHC upgrade project
	Huffman, BT; Affolder, A; Arndt, K; Bates, R; Benoit, M; Di Bello, F; Blue, A; Bortoletto, D; Buckland, M; Buttar, C
刊名	JOURNAL OF INSTRUMENTATION
	2016
卷号	11
关键词	Radiation damage to electronic components Solid state detectors Radiation-hard detectors Particle tracking detectors (Solid-state detectors)
DOI	10.1088/1748-0221/11/02/C02005
文献子类	Article; Proceedings Paper
英文摘要	The LHC luminosity upgrade, known as the High Luminosity LHC (HL-LHC), will require the replacement of the existing silicon strip tracker and the transistion radiation tracker. Although a baseline design for this tracker exists the ATLAS collaboration and other non-ATLAS groups are exploring the feasibility of using CMOS Monolithic Active Pixel Sensors (MAPS) which would be arranged in a strip-like fashion and would take advantage of the service and support structure already being developed for the upgrade. Two test devices made with theAMSH35 process (a High voltage or HV CMOS process) have been subjected to various radiation environments and have performed well. The results of these tests are presented in this paper.
WOS关键词	PIXEL DETECTORS ; TECHNOLOGY
语种	英语
WOS记录号	WOS:000371479800005
内容类型	期刊论文
源URL	[http://ir.ihep.ac.cn/handle/311005/260991]
专题	高能物理研究所_实验物理中心
作者单位	中国科学院高能物理研究所
推荐引用方式 GB/T 7714	Huffman, BT,Affolder, A,Arndt, K,et al. Radiation hardness of two CMOS prototypes for the ATLAS HL-LHC upgrade project[J]. JOURNAL OF INSTRUMENTATION,2016,11.
APA	Huffman, BT.,Affolder, A.,Arndt, K.,Bates, R.,Benoit, M.,...&朱宏博.(2016).Radiation hardness of two CMOS prototypes for the ATLAS HL-LHC upgrade project.JOURNAL OF INSTRUMENTATION,11.
MLA	Huffman, BT,et al."Radiation hardness of two CMOS prototypes for the ATLAS HL-LHC upgrade project".JOURNAL OF INSTRUMENTATION 11(2016).