Tunable Electronic Structures in Wrinkled 2D Transition-Metal-Trichalcogenide (TMT) HfTe3 Films

doi:10.1002/aelm.201600324

	Tunable Electronic Structures in Wrinkled 2D Transition-Metal-Trichalcogenide (TMT) HfTe3 Films
	Wang, YQ; Wu, X; Ge, YF; Wang, YL; Guo, HM; Shao, Y; Lei, T; Liu, C; Wang, JO; Zhu, SY
刊名	ADVANCED ELECTRONIC MATERIALS
	2016
卷号	2 期号:12
DOI	10.1002/aelm.201600324
文献子类	期刊论文
英文摘要	2D materials with anisotropic symmetry are likely, in general, to possess strain that is artificially adjustable in a single direction, inspiring strategies of artificial regulation of local structures and related properties. Herein, strain-induced wrinkles in an anisotropic 2D transition-metal-trichalcogenide HfTe3 film are fabricated and illustrated for the first time. The corresponding localized electronic structures in the 1D corrugated wrinkles are revealed by a combination of experiment and simulation. The wrinkled HfTe3 film probably features electrical transport properties never before seen and useful for developing wrinkle-based heterojunctions for novel nanoelectronic devices.
WOS关键词	RAMAN-SPECTROSCOPY ; GRAPHENE ; STRAIN ; SEMICONDUCTOR
语种	英语
WOS记录号	WOS:000392939300011
内容类型	期刊论文
源URL	[http://ir.ihep.ac.cn/handle/311005/260403]
专题	高能物理研究所_多学科研究中心
作者单位	中国科学院高能物理研究所
推荐引用方式 GB/T 7714	Wang, YQ,Wu, X,Ge, YF,et al. Tunable Electronic Structures in Wrinkled 2D Transition-Metal-Trichalcogenide (TMT) HfTe3 Films[J]. ADVANCED ELECTRONIC MATERIALS,2016,2(12).
APA	Wang, YQ.,Wu, X.,Ge, YF.,Wang, YL.,Guo, HM.,...&奎热西.(2016).Tunable Electronic Structures in Wrinkled 2D Transition-Metal-Trichalcogenide (TMT) HfTe3 Films.ADVANCED ELECTRONIC MATERIALS,2(12).
MLA	Wang, YQ,et al."Tunable Electronic Structures in Wrinkled 2D Transition-Metal-Trichalcogenide (TMT) HfTe3 Films".ADVANCED ELECTRONIC MATERIALS 2.12(2016).