Electronic properties of a doped antiferromagnet on a kagome lattice

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	Electronic properties of a doped antiferromagnet on a kagome lattice
	Yu, WQ; Feng, SP; Yu, WQ , Beijing Normal Univ, Dept Phys, Beijing 100875, Peoples R China.
刊名	PHYSICAL REVIEW B
	1999
卷号	59 期号:21 页码:13546-13549
关键词	Copper-oxide Materials Superconducting Transition-temperature 2-dimensional Heisenberg-model Resonating-valence-bond Triangular-lattice Photoemission Order Separation States Wave
ISSN号	0163-1829
英文摘要	Within the t-J model, we study the electronic properties of a doped antiferromagnet on a kagome lattice based on the framework of the self-consistent mean-field theory. At the half-filling, the spin-liquid ground-state energy per site of the kagome antiferromagnet is E-g/N(s)J = - 0.859, which is in very good agreement with the numerical estimates. Away from the half-filling, the electron phatoemission spectroscopy and density of states are discussed, and the results indicate that there is a gap in the normal state of the system.
学科主题	Physics
URL标识	查看原文
WOS记录号	WOS:000080778700016
公开日期	2012-08-29
内容类型	期刊论文
源URL	[http://ir.itp.ac.cn/handle/311006/13140]
专题	理论物理研究所_理论物理所1978-2010年知识产出
通讯作者	Yu, WQ , Beijing Normal Univ, Dept Phys, Beijing 100875, Peoples R China.
推荐引用方式 GB/T 7714	Yu, WQ,Feng, SP,Yu, WQ , Beijing Normal Univ, Dept Phys, Beijing 100875, Peoples R China.. Electronic properties of a doped antiferromagnet on a kagome lattice[J]. PHYSICAL REVIEW B,1999,59(21):13546-13549.
APA	Yu, WQ,Feng, SP,&Yu, WQ , Beijing Normal Univ, Dept Phys, Beijing 100875, Peoples R China..(1999).Electronic properties of a doped antiferromagnet on a kagome lattice.PHYSICAL REVIEW B,59(21),13546-13549.
MLA	Yu, WQ,et al."Electronic properties of a doped antiferromagnet on a kagome lattice".PHYSICAL REVIEW B 59.21(1999):13546-13549.