Electromagnetic manipulation for the anti-Zeno effect in an engineered quantum tunneling process

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	Electromagnetic manipulation for the anti-Zeno effect in an engineered quantum tunneling process
	Zhou, Lan; Hu, F. M.; Lu, Jing; Sun, C. P.; Zhou, L , Chinese Acad Sci, Inst Theoret Phys, Beijing 100080, Peoples R China
刊名	PHYSICAL REVIEW A
	2006
卷号	74 期号:3 页码:-
关键词	Decoherence Decay Paradox States Chain
ISSN号	1050-2947
英文摘要	We investigate the anti-Zeno phenomenon as well as the quantum Zeno effect for the irreversible quantum tunneling from a quantum dot to a ring array of quantum dots. By modeling the total system with the Anderson-Fano-Lee model, it is found that the transition from the quantum Zeno to the quantum anti-Zeno effect can happen by adjusting magnetic flux and gate voltage.
学科主题	Physics
URL标识	查看原文
WOS记录号	WOS:000241067100020
公开日期	2012-08-02
内容类型	期刊论文
源URL	[http://ir.itp.ac.cn/handle/311006/5913]
专题	理论物理研究所_理论物理所1978-2010年知识产出
通讯作者	Zhou, L , Chinese Acad Sci, Inst Theoret Phys, Beijing 100080, Peoples R China
推荐引用方式 GB/T 7714	Zhou, Lan,Hu, F. M.,Lu, Jing,et al. Electromagnetic manipulation for the anti-Zeno effect in an engineered quantum tunneling process[J]. PHYSICAL REVIEW A,2006,74(3):-.
APA	Zhou, Lan,Hu, F. M.,Lu, Jing,Sun, C. P.,&Zhou, L , Chinese Acad Sci, Inst Theoret Phys, Beijing 100080, Peoples R China.(2006).Electromagnetic manipulation for the anti-Zeno effect in an engineered quantum tunneling process.PHYSICAL REVIEW A,74(3),-.
MLA	Zhou, Lan,et al."Electromagnetic manipulation for the anti-Zeno effect in an engineered quantum tunneling process".PHYSICAL REVIEW A 74.3(2006):-.