Electrophysiological correlates for response inhibition in intellectually gifted children: A Go/NoGo study
Duan, Xiaoju1,2; Shi, Jiannong1; Wu, Jianhui1; Mou, Yi3; Cui, Hairong4; Wang, Guiqing5; Jiannong Shi
刊名NEUROSCIENCE LETTERS
2009-06-19
卷号457期号:1页码:45-48
关键词Event-related potentials Intelligence Go/NoGo Inhibitory Gifted
ISSN号0304-3940
文献子类Article
英文摘要Superior response inhibition is an essential component of the advanced cognitive abilities of gifted children. This study investigated response inhibition in intellectually gifted children by recording event-related brain potentials (ERPs) during a Go/NoGo task. Fifteen intellectually gifted children and 15 intellectually average children participated. Our present findings showed that intellectually gifted children had shorter Go-P3 latency, indicating faster processing of Go stimuli, a finding consistent with previous studies. We focused on the two inhibition-related components, NoGo-N2 and NoGo-P3. The results showed that NoGo-P3 latency was shorter for intellectually gifted children compared to their average peers. N2 latency did not indicate the intelligence difference. These results suggested that intellectually gifted children showed faster inhibition when dealing with NoGo stimuli, and this superiority came from the later stages of inhibition, i.e., response evaluation or the success of inhibiting a response, as indexed by the shorter P3 latency.; Superior response inhibition is an essential component of the advanced cognitive abilities of gifted children. This study investigated response inhibition in intellectually gifted children by recording event-related brain potentials (ERPs) during a Go/NoGo task. Fifteen intellectually gifted children and 15 intellectually average children participated. Our present findings showed that intellectually gifted children had shorter Go-P3 latency, indicating faster processing of Go stimuli, a finding consistent with previous studies. We focused on the two inhibition-related components, NoGo-N2 and NoGo-P3. The results showed that NoGo-P3 latency was shorter for intellectually gifted children compared to their average peers. N2 latency did not indicate the intelligence difference. These results suggested that intellectually gifted children showed faster inhibition when dealing with NoGo stimuli, and this superiority came from the later stages of inhibition, i.e., response evaluation or the success of inhibiting a response, as indexed by the shorter P3 latency. (C) 2009 Elsevier Ireland Ltd. All rights reserved.
学科主题发展心理学 ; 认知神经科学
语种英语
WOS记录号WOS:000266360300011
公开日期2011-08-22
内容类型期刊论文
源URL[http://ir.psych.ac.cn/handle/311026/5368]  
专题心理研究所_中国科学院心理研究所回溯数据库(1956-2010)
通讯作者Jiannong Shi
作者单位1.Chinese Acad Sci, Inst Psychol, Beijing 100101, Peoples R China
2.Chinese Acad Sci, Grad Sch, Beijing 100101, Peoples R China
3.Univ Missouri, Columbia, MO USA
4.QiSeGuang Sch, Handan, Peoples R China
5.NE YuCai Sch, Shenyang, Peoples R China
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GB/T 7714
Duan, Xiaoju,Shi, Jiannong,Wu, Jianhui,et al. Electrophysiological correlates for response inhibition in intellectually gifted children: A Go/NoGo study[J]. NEUROSCIENCE LETTERS,2009,457(1):45-48.
APA Duan, Xiaoju.,Shi, Jiannong.,Wu, Jianhui.,Mou, Yi.,Cui, Hairong.,...&Jiannong Shi.(2009).Electrophysiological correlates for response inhibition in intellectually gifted children: A Go/NoGo study.NEUROSCIENCE LETTERS,457(1),45-48.
MLA Duan, Xiaoju,et al."Electrophysiological correlates for response inhibition in intellectually gifted children: A Go/NoGo study".NEUROSCIENCE LETTERS 457.1(2009):45-48.
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