Raman enhancement on ultra-clean graphene quantum dots produced by quasi-equilibrium plasma-enhanced chemical vapor deposition

doi:10.1038/s41467-017-02627-5

CORC > 重庆绿色智能技术研究院 > 中国科学院重庆绿色智能技术研究院 > 微纳制造与系统集成研究中心

	Raman enhancement on ultra-clean graphene quantum dots produced by quasi-equilibrium plasma-enhanced chemical vapor deposition
	Liu, Donghua 1,2; Chen, Xiaosong 1,2; Hu, Yibin 3,4; Sun, Tai5 ; Song, Zhibo 6; Zheng, Yujie 6; Cao, Yongbin 1,2; Cai, Zhi 1,2; Cao, Min 1,2; Peng, Lan 1,2
刊名	NATURE COMMUNICATIONS
	2018-01-15
卷号	9 页码:10
ISSN号	2041-1723
DOI	10.1038/s41467-017-02627-5
英文摘要	Graphene is regarded as a potential surface-enhanced Raman spectroscopy (SERS) substrate. However, the application of graphene quantum dots (GQDs) has had limited success due to material quality. Here, we develop a quasi-equilibrium plasma-enhanced chemical vapor deposition method to produce high-quality ultra-clean GQDs with sizes down to 2 nm directly on SiO2/Si, which are used as SERS substrates. The enhancement factor, which depends on the GQD size, is higher than conventional graphene sheets with sensitivity down to 1 x 10(-9) mol L-1 rhodamine. This is attributed to the high-quality GQDs with atomically clean surfaces and large number of edges, as well as the enhanced charge transfer between molecules and GQDs with appropriate diameters due to the existence of Van Hove singularities in the electronic density of states. This work demonstrates a sensitive SERS substrate, and is valuable for applications of GQDs in graphene-based photonics and optoelectronics.
资助项目	National Program for Thousand Young Talents of China ; National Natural Science Foundation of China[51773041] ; National Natural Science Foundation of China[21603038] ; National Natural Science Foundation of China[21544001] ; National Natural Science Foundation of China[11404329] ; National Natural Science Foundation of China[61474130] ; National Natural Science Foundation of China[11504395] ; National High-tech R&D Program of China (863 Program)[2015AA034801] ; Natural Science Foundation Project of CQ CSTC[CSTC2014jcyjjq50004] ; Fudan University ; one hundred talents project of the Chinese Academy of Sciences
WOS研究方向	Science & Technology - Other Topics
语种	英语
出版者	NATURE PUBLISHING GROUP
WOS记录号	WOS:000422646500008
内容类型	期刊论文
源URL	[http://119.78.100.138/handle/2HOD01W0/6240]
专题	微纳制造与系统集成研究中心
通讯作者	Chen, Gang; Wei, Dapeng; Wei, Dacheng
作者单位	1.Fudan Univ, State Key Lab Mol Engn Polymers, Shanghai 200433, Peoples R China 2.Fudan Univ, Dept Macromol Sci, Shanghai 200433, Peoples R China 3.Chinese Acad Sci, Shanghai Natl Lab Infrared Phys, Shanghai 200433, Peoples R China 4.Chinese Acad Sci, Inst Tech Phys, Shanghai 200433, Peoples R China 5.Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing Key Lab Multi Scale Mfg Technol, Chongqing 400714, Peoples R China 6.Natl Univ Singapore, Dept Phys, 2 Sci Dr 3, Singapore 117542, Singapore
推荐引用方式 GB/T 7714	Liu, Donghua,Chen, Xiaosong,Hu, Yibin,et al. Raman enhancement on ultra-clean graphene quantum dots produced by quasi-equilibrium plasma-enhanced chemical vapor deposition[J]. NATURE COMMUNICATIONS,2018,9:10.
APA	Liu, Donghua.,Chen, Xiaosong.,Hu, Yibin.,Sun, Tai.,Song, Zhibo.,...&Wei, Dacheng.(2018).Raman enhancement on ultra-clean graphene quantum dots produced by quasi-equilibrium plasma-enhanced chemical vapor deposition.NATURE COMMUNICATIONS,9,10.
MLA	Liu, Donghua,et al."Raman enhancement on ultra-clean graphene quantum dots produced by quasi-equilibrium plasma-enhanced chemical vapor deposition".NATURE COMMUNICATIONS 9(2018):10.