Catalyst-Free, Selective Growth of ZnO Nanowires on SiO2 by Chemical Vapor Deposition for Transfer-Free Fabrication of UV Photodetectors

doi:10.1021/acsami.5b05811

CORC > 重庆绿色智能技术研究院 > 中国科学院重庆绿色智能技术研究院 > 微纳制造与系统集成研究中心

	Catalyst-Free, Selective Growth of ZnO Nanowires on SiO2 by Chemical Vapor Deposition for Transfer-Free Fabrication of UV Photodetectors
	Xu, Liping 1,2,3; Li, Xin2,3 ; Zhan, Zhaoyao 2,3; Wang, Lian 2,3; Feng, Shuanglong2,3 ; Chai, Xiangyu 1; Lu, Wenqiang2,3 ; Shen, Jun 2,3; Weng, Zhankun 1; Sun, Jie 4
刊名	ACS APPLIED MATERIALS & INTERFACES
	2015-09-16
卷号	7 期号:36 页码:20264-20271
关键词	catalyst-free transfer-free ZnO nanowires UV photodetector
ISSN号	1944-8244
DOI	10.1021/acsami.5b05811
通讯作者	Weng, ZK (reprint author), Changchun Univ Sci & Technol, Sch Elect & Informat Engn, Changchun 130022, Jilin, Peoples R China.
英文摘要	Catalyst-free, selective growth of ZnO nanowires directly on the commonly used dielectric SiO2 layer is of both scientific significance and application importance, yet it is still a challenge. Here, we report a facile method to grow single-crystal ZnO nanowires on a large scale directly on SiO2/Si substrate through vapor solid mechanism without using any predeposited metal catalyst or seed layer. We found that a rough SiO2/Si substrate surface created by the reactive ion etching is critical for ZnO growth without using catalyst. ZnO nanowire array exclusively grows in area etched by the reactive ion etching method. The advantages of this method include facile and safe roughness-assisted catalyst-free growth of ZnO nanowires on SiO2/Si substrate and the subsequent transfer-free fabrication of electronic or optoelectronic devices. The ZnO nanowire UV photodetector fabricated by a transfer-free process presented high performance in responsivity, quantum efficiency and response speed, even without any post-treatments. The strategy shown here would greatly reduce the complexity in nanodevice fabrication and give an impetus to the application of ZnO nanowires in nanoelectronics and optoelectronics.
资助项目	National Natural Science Foundation of China[51402290] ; Beijing Natural Science Foundation[4152003]
WOS研究方向	Science & Technology - Other Topics ; Materials Science
语种	英语
出版者	AMER CHEMICAL SOC
WOS记录号	WOS:000361501700047
内容类型	期刊论文
源URL	[http://119.78.100.138/handle/2HOD01W0/1902]
专题	微纳制造与系统集成研究中心
通讯作者	Weng, Zhankun
作者单位	1.Changchun Univ Sci & Technol, Sch Elect & Informat Engn, Changchun 130022, Jilin, Peoples R China 2.Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing 400714, Peoples R China 3.Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing Key Lab Multiscale Mfg Technol, Chongqing 400714, Peoples R China 4.Beijing Univ Technol, Coll Elect Informat & Control Engn, Beijing 100124, Peoples R China
推荐引用方式 GB/T 7714	Xu, Liping,Li, Xin,Zhan, Zhaoyao,et al. Catalyst-Free, Selective Growth of ZnO Nanowires on SiO2 by Chemical Vapor Deposition for Transfer-Free Fabrication of UV Photodetectors[J]. ACS APPLIED MATERIALS & INTERFACES,2015,7(36):20264-20271.
APA	Xu, Liping.,Li, Xin.,Zhan, Zhaoyao.,Wang, Lian.,Feng, Shuanglong.,...&Sun, Jie.(2015).Catalyst-Free, Selective Growth of ZnO Nanowires on SiO2 by Chemical Vapor Deposition for Transfer-Free Fabrication of UV Photodetectors.ACS APPLIED MATERIALS & INTERFACES,7(36),20264-20271.
MLA	Xu, Liping,et al."Catalyst-Free, Selective Growth of ZnO Nanowires on SiO2 by Chemical Vapor Deposition for Transfer-Free Fabrication of UV Photodetectors".ACS APPLIED MATERIALS & INTERFACES 7.36(2015):20264-20271.