Predicted electronic markers for polytypes of LaOBiS2 examined via angle-resolved photoemission spectroscopy
Zhou, Xiaoqing1; Liu, Qihang2; Waugh, J. A.1; Li, Haoxiang1; Nummy, T.1; Zhang, Xiuwen2; Zhu, Xiangde3; Cao, Gang4; Zunger, Alex2; Dessau, D. S.1,2
刊名PHYSICAL REVIEW B
2017-02-09
卷号95期号:7页码:1-9
DOI10.1103/PhysRevB.95.075118
文献子类Article
英文摘要The natural periodic stacking of symmetry-inequivalent planes in layered compounds can lead to the formation of natural superlattices; albeit close in total energy, (thus in their thermodynamic stability), such polytype superlattices can exhibit different structural symmetries, thus have markedly different electronic properties which can in turn be used as "structural markers". We illustrate this general principle on the layered LaOBiS2 compound where density(functional theory (DFT) calculations on the (BiS2)/(LaO)/(BiS2) polytype superlattices reveal both qualitatively and quantitatively distinct electronic structure markers associated with the Rashba physics, yet the total energies are only similar to 0.1 meV apart. This opens the exciting possibility of identifying subtle structural features via electronic markers. We show that the pattern of removal of band degeneracies in different polytypes by the different forms of symmetry breaking leads to Rashba "minigaps" with characteristic Rashba parameters that can be determined from spectroscopy, thereby narrowing down the physically possible polytypes. By identifying these distinct DFT(predicted fingerprints via angle(resolved photoemission spectroscopy (ARPES) measurements on LaBiOS2 we found the dominant polytype with small amounts ofmixtures of other polytypes. This conclusion, consistent with neutron scattering results, establishes ARPES detection of theoretically established electronic markers as a powerful tool to delineate energetically quasidegenerate polytypes.
WOS关键词SEMICONDUCTORS ; TRANSISTORS ; CRYSTALS ; GROWTH ; FILMS
WOS研究方向Physics
语种英语
WOS记录号WOS:000393590500001
资助机构National Science Foundation (NSF) Designing Materials to Revolutionize and Engineer our Future (DMREF)(DMR-1334170) ; National Science Foundation (NSF) Designing Materials to Revolutionize and Engineer our Future (DMREF)(DMR-1334170) ; National Science Foundation (NSF) Designing Materials to Revolutionize and Engineer our Future (DMREF)(DMR-1334170) ; National Science Foundation (NSF) Designing Materials to Revolutionize and Engineer our Future (DMREF)(DMR-1334170) ; National Science Foundation (NSF) Designing Materials to Revolutionize and Engineer our Future (DMREF)(DMR-1334170) ; National Science Foundation (NSF) Designing Materials to Revolutionize and Engineer our Future (DMREF)(DMR-1334170) ; National Science Foundation (NSF) Designing Materials to Revolutionize and Engineer our Future (DMREF)(DMR-1334170) ; National Science Foundation (NSF) Designing Materials to Revolutionize and Engineer our Future (DMREF)(DMR-1334170) ; University of Kentucky ; University of Kentucky ; University of Kentucky ; University of Kentucky ; University of Kentucky ; University of Kentucky ; University of Kentucky ; University of Kentucky ; Office of Science, Office of Basic Energy Sciences, of the U.S. Department of Energy(DE-AC02-05CH11231) ; Office of Science, Office of Basic Energy Sciences, of the U.S. Department of Energy(DE-AC02-05CH11231) ; Office of Science, Office of Basic Energy Sciences, of the U.S. Department of Energy(DE-AC02-05CH11231) ; Office of Science, Office of Basic Energy Sciences, of the U.S. Department of Energy(DE-AC02-05CH11231) ; Office of Science, Office of Basic Energy Sciences, of the U.S. Department of Energy(DE-AC02-05CH11231) ; Office of Science, Office of Basic Energy Sciences, of the U.S. Department of Energy(DE-AC02-05CH11231) ; Office of Science, Office of Basic Energy Sciences, of the U.S. Department of Energy(DE-AC02-05CH11231) ; Office of Science, Office of Basic Energy Sciences, of the U.S. Department of Energy(DE-AC02-05CH11231) ; National Science Foundation (NSF) Designing Materials to Revolutionize and Engineer our Future (DMREF)(DMR-1334170) ; National Science Foundation (NSF) Designing Materials to Revolutionize and Engineer our Future (DMREF)(DMR-1334170) ; National Science Foundation (NSF) Designing Materials to Revolutionize and Engineer our Future (DMREF)(DMR-1334170) ; National Science Foundation (NSF) Designing Materials to Revolutionize and Engineer our Future (DMREF)(DMR-1334170) ; National Science Foundation (NSF) Designing Materials to Revolutionize and Engineer our Future (DMREF)(DMR-1334170) ; National Science Foundation (NSF) Designing Materials to Revolutionize and Engineer our Future (DMREF)(DMR-1334170) ; National Science Foundation (NSF) Designing Materials to Revolutionize and Engineer our Future (DMREF)(DMR-1334170) ; National Science Foundation (NSF) Designing Materials to Revolutionize and Engineer our Future (DMREF)(DMR-1334170) ; University of Kentucky ; University of Kentucky ; University of Kentucky ; University of Kentucky ; University of Kentucky ; University of Kentucky ; University of Kentucky ; University of Kentucky ; Office of Science, Office of Basic Energy Sciences, of the U.S. Department of Energy(DE-AC02-05CH11231) ; Office of Science, Office of Basic Energy Sciences, of the U.S. Department of Energy(DE-AC02-05CH11231) ; Office of Science, Office of Basic Energy Sciences, of the U.S. Department of Energy(DE-AC02-05CH11231) ; Office of Science, Office of Basic Energy Sciences, of the U.S. Department of Energy(DE-AC02-05CH11231) ; Office of Science, Office of Basic Energy Sciences, of the U.S. Department of Energy(DE-AC02-05CH11231) ; Office of Science, Office of Basic Energy Sciences, of the U.S. Department of Energy(DE-AC02-05CH11231) ; Office of Science, Office of Basic Energy Sciences, of the U.S. Department of Energy(DE-AC02-05CH11231) ; Office of Science, Office of Basic Energy Sciences, of the U.S. Department of Energy(DE-AC02-05CH11231)
内容类型期刊论文
源URL[http://ir.hfcas.ac.cn:8080/handle/334002/32827]  
专题合肥物质科学研究院_中科院强磁场科学中心
作者单位1.Univ Colorado, Dept Phys, Boulder, CO 80309 USA
2.Univ Colorado, Renewable & Sustainable Energy Inst, Boulder, CO 80309 USA
3.Chinese Acad Sci, High Field Magnet Lab, Hefei, Peoples R China
4.Univ Kentucky, Lexington, KY 40506 USA
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Zhou, Xiaoqing,Liu, Qihang,Waugh, J. A.,et al. Predicted electronic markers for polytypes of LaOBiS2 examined via angle-resolved photoemission spectroscopy[J]. PHYSICAL REVIEW B,2017,95(7):1-9.
APA Zhou, Xiaoqing.,Liu, Qihang.,Waugh, J. A..,Li, Haoxiang.,Nummy, T..,...&Dessau, D. S..(2017).Predicted electronic markers for polytypes of LaOBiS2 examined via angle-resolved photoemission spectroscopy.PHYSICAL REVIEW B,95(7),1-9.
MLA Zhou, Xiaoqing,et al."Predicted electronic markers for polytypes of LaOBiS2 examined via angle-resolved photoemission spectroscopy".PHYSICAL REVIEW B 95.7(2017):1-9.
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