Heavily N-doped monolayer graphene electrodes used for high-performance N-channel polymeric thin film transistors

doi:10.1039/c6ra20496a

CORC > 合肥物质科学研究院 > 中国科学院合肥物质科学研究院 > 中科院强磁场科学中心

	Heavily N-doped monolayer graphene electrodes used for high-performance N-channel polymeric thin film transistors
	Zhou, Guoqing; Pan, Guoxing; Wei, Lingzhi; Li, Tian; Zhang, Fapei
刊名	RSC ADVANCES
	2016
卷号	6 期号:96 页码:93855-93862
DOI	10.1039/c6ra20496a
文献子类	Article
英文摘要	Recently graphene attracted much attention as a promising electrode material for organic field effect transistors (OFETs). However the electrodes used in most of the graphene-based OFETs were prepared from pristine graphene which suffers from relatively low conductivity and poor controlling of work function. In this work, we report the N-doping by Cs2CO3 of the CVD-grown single-layer graphene (SLG) via a facial spin-coating process. The Cs2CO3-engineered SLGs exhibit a heavy and stable N-doping, as well as significantly decreased work function (3.9 eV) compared to pristine graphene. The doped graphene was used as the source/drain electrodes in the bottom-contact top-gated OFETs based on a good electron transporter poly{[N, N'-bis(2-octyldodecyl)-1,4,5,8-naphthalenedicarboximide-2,6-diyl]-alt-5,5'-(2,2'-bithiophene)} (P(NDI2OD-T2)). The polymeric FETs show an enhancement of electron mobility by a factor of 10, as well as a reduction of contact resistance compared to the devices using pristine graphene. It is attributed to a remarkable lowering of electron injection barrier at the polymer/graphene electrode due to the decreased work function of graphene. In addition, the microstructural observations reveal that the face-on molecular packing and morphological feature do not change for the P(NDI2OD-T2) films coated on the doped graphene electrodes compared to those on the SiO2 dielectric, in spite of a highly hydrophobic surface of the graphene.
WOS关键词	SINGLE-LAYER GRAPHENE ; FIELD-EFFECT TRANSISTORS ; LIGHT-EMITTING-DIODES ; ORGANIC SOLAR-CELLS ; CESIUM CARBONATE ; HIGH-MOBILITY ; SEMICONDUCTOR ; NANOPARTICLES ; EFFICIENT ; ALIGNMENT
WOS研究方向	Chemistry
语种	英语
WOS记录号	WOS:000385631900077
资助机构	Chinese Academy of Sciences (CAS) ; Chinese Academy of Sciences (CAS) ; Chinese Academy of Sciences (CAS) ; Chinese Academy of Sciences (CAS) ; Chinese Academy of Sciences (CAS) ; Chinese Academy of Sciences (CAS) ; Chinese Academy of Sciences (CAS) ; Chinese Academy of Sciences (CAS) ; National Nature Science Foundation of China (NSFC)(11074256 ; National Nature Science Foundation of China (NSFC)(11074256 ; National Nature Science Foundation of China (NSFC)(11074256 ; National Nature Science Foundation of China (NSFC)(11074256 ; National Nature Science Foundation of China (NSFC)(11074256 ; National Nature Science Foundation of China (NSFC)(11074256 ; National Nature Science Foundation of China (NSFC)(11074256 ; National Nature Science Foundation of China (NSFC)(11074256 ; 11574314 ; 11574314 ; 11574314 ; 11574314 ; 11574314 ; 11574314 ; 11574314 ; 11574314 ; 21301177) ; 21301177) ; 21301177) ; 21301177) ; 21301177) ; 21301177) ; 21301177) ; 21301177) ; Chinese Academy of Sciences (CAS) ; Chinese Academy of Sciences (CAS) ; Chinese Academy of Sciences (CAS) ; Chinese Academy of Sciences (CAS) ; Chinese Academy of Sciences (CAS) ; Chinese Academy of Sciences (CAS) ; Chinese Academy of Sciences (CAS) ; Chinese Academy of Sciences (CAS) ; National Nature Science Foundation of China (NSFC)(11074256 ; National Nature Science Foundation of China (NSFC)(11074256 ; National Nature Science Foundation of China (NSFC)(11074256 ; National Nature Science Foundation of China (NSFC)(11074256 ; National Nature Science Foundation of China (NSFC)(11074256 ; National Nature Science Foundation of China (NSFC)(11074256 ; National Nature Science Foundation of China (NSFC)(11074256 ; National Nature Science Foundation of China (NSFC)(11074256 ; 11574314 ; 11574314 ; 11574314 ; 11574314 ; 11574314 ; 11574314 ; 11574314 ; 11574314 ; 21301177) ; 21301177) ; 21301177) ; 21301177) ; 21301177) ; 21301177) ; 21301177) ; 21301177)
内容类型	期刊论文
源URL	[http://ir.hfcas.ac.cn:8080/handle/334002/30187]
专题	合肥物质科学研究院_中科院强磁场科学中心
作者单位	Chinese Acad Sci, High Field Magnet Lab, Hefei 230031, Peoples R China
推荐引用方式 GB/T 7714	Zhou, Guoqing,Pan, Guoxing,Wei, Lingzhi,et al. Heavily N-doped monolayer graphene electrodes used for high-performance N-channel polymeric thin film transistors[J]. RSC ADVANCES,2016,6(96):93855-93862.
APA	Zhou, Guoqing,Pan, Guoxing,Wei, Lingzhi,Li, Tian,&Zhang, Fapei.(2016).Heavily N-doped monolayer graphene electrodes used for high-performance N-channel polymeric thin film transistors.RSC ADVANCES,6(96),93855-93862.
MLA	Zhou, Guoqing,et al."Heavily N-doped monolayer graphene electrodes used for high-performance N-channel polymeric thin film transistors".RSC ADVANCES 6.96(2016):93855-93862.