Annealing-temperature-modulated optical, electrical properties, and leakage current transport mechanism of sol-gel-processed high-k HfAlOX gate dielectrics

doi:10.1016/j.ceramint.2016.11.120

CORC > 合肥物质科学研究院 > 中国科学院合肥物质科学研究院 > 中科院固体物理研究所

	Annealing-temperature-modulated optical, electrical properties, and leakage current transport mechanism of sol-gel-processed high-k HfAlOX gate dielectrics
	Jin, P.1; He, G.1; Fang, Z. B.2; Liu, M.3; Xiao, D. Q.1; Gao, J.1 ; Jiang, S. S.1; Li, W. D.1; Sun, Z. Q.1; Zhang, M.1,4
刊名	CERAMICS INTERNATIONAL
	2017-02-15
卷号	43 期号:3 页码:3101-3106
关键词	High-k Hfalox Gate Dielectrics Sol-gel Optical Properties Electrical Properties Leakage Current Transport Mechanism
DOI	10.1016/j.ceramint.2016.11.120
文献子类	Article
英文摘要	Deposition of HfAlOx gate dielectric films on n-type Si and quartz substrates by sol-gel technique has been performed and the optical, electrical characteristics of the as-deposited HfAlOx thin films as a function of annealing temperature have been investigated. The optical properties of HfAlOx thin films related to annealing temperature are investigated by ultraviolet-visible spectroscopy (UV-vis) and spectroscopy ellipsometry (SE). By measurement of UV-vis, average transmission of all the HfAlOx samples are about 85% owing to their uniform composition. And the increase in band gap has been observed with the increase of annealing temperature. Moreover, the increase of refractive index (n) and density with the increase of annealing temperature are obtained by SE measurements. Additionally, the electrical properties based on Al/Si/HfAlOx/Al capacitor are analyzed by means of the high frequency capacitance-voltage (C-V) and the leakage current density-voltage (J-V) characteristics. Results have shown that 400 degrees C-annealed sample demonstrates good electrical performance, including larger dielectric constant of 12.93 and lower leakage current density of 3.75x 10(-7) A/cm(2) at the gate voltage of 1 V. Additionally, the leakage current conduction mechanisms as functions of annealing temperatures are also discussed systematically.
WOS关键词	THIN-FILMS ; INTERFACIAL PROPERTIES ; HFO2 FILMS ; MICROSTRUCTURE ; EVAPORATION ; NITRIDATION ; DEPOSITION
WOS研究方向	Materials Science
语种	英语
WOS记录号	WOS:000392769600027
资助机构	National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Doctor Scientific Research Fund of Anhui University(J01001927) ; Doctor Scientific Research Fund of Anhui University(J01001927) ; Doctor Scientific Research Fund of Anhui University(J01001927) ; Doctor Scientific Research Fund of Anhui University(J01001927) ; Youth Core Teacher Fund of Anhui University(J01005111) ; Youth Core Teacher Fund of Anhui University(J01005111) ; Youth Core Teacher Fund of Anhui University(J01005111) ; Youth Core Teacher Fund of Anhui University(J01005111) ; Foundation of Co-operative Innovation Research Center for Weak Signal-Detecting Materials and Devices Integration Anhui University(Y01008411) ; Foundation of Co-operative Innovation Research Center for Weak Signal-Detecting Materials and Devices Integration Anhui University(Y01008411) ; Foundation of Co-operative Innovation Research Center for Weak Signal-Detecting Materials and Devices Integration Anhui University(Y01008411) ; Foundation of Co-operative Innovation Research Center for Weak Signal-Detecting Materials and Devices Integration Anhui University(Y01008411) ; 11474284 ; 11474284 ; 11474284 ; 11474284 ; 51272159) ; 51272159) ; 51272159) ; 51272159) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Doctor Scientific Research Fund of Anhui University(J01001927) ; Doctor Scientific Research Fund of Anhui University(J01001927) ; Doctor Scientific Research Fund of Anhui University(J01001927) ; Doctor Scientific Research Fund of Anhui University(J01001927) ; Youth Core Teacher Fund of Anhui University(J01005111) ; Youth Core Teacher Fund of Anhui University(J01005111) ; Youth Core Teacher Fund of Anhui University(J01005111) ; Youth Core Teacher Fund of Anhui University(J01005111) ; Foundation of Co-operative Innovation Research Center for Weak Signal-Detecting Materials and Devices Integration Anhui University(Y01008411) ; Foundation of Co-operative Innovation Research Center for Weak Signal-Detecting Materials and Devices Integration Anhui University(Y01008411) ; Foundation of Co-operative Innovation Research Center for Weak Signal-Detecting Materials and Devices Integration Anhui University(Y01008411) ; Foundation of Co-operative Innovation Research Center for Weak Signal-Detecting Materials and Devices Integration Anhui University(Y01008411) ; 11474284 ; 11474284 ; 11474284 ; 11474284 ; 51272159) ; 51272159) ; 51272159) ; 51272159)
内容类型	期刊论文
源URL	[http://ir.hfcas.ac.cn:8080/handle/334002/32803]
专题	合肥物质科学研究院_中科院固体物理研究所
作者单位	1.Anhui Univ, Radiat Detect Mat & Devices Lab, Sch Phys & Mat Sci, Hefei 230601, Peoples R China 2.Shaoxing Univ, Dept Phys, Shaoxing 312000, Peoples R China 3.Chinese Acad Sci, Inst Solid State Phys, Anhui Key Lab Nanomat & Nanostruct, Key Lab Mat Phys, Hefei 230031, Peoples R China 4.Anhui Univ, Cooperat Innovat Res Ctr Weak Signal Detecting Ma, Hefei 230601, Peoples R China
推荐引用方式 GB/T 7714	Jin, P.,He, G.,Fang, Z. B.,et al. Annealing-temperature-modulated optical, electrical properties, and leakage current transport mechanism of sol-gel-processed high-k HfAlOX gate dielectrics[J]. CERAMICS INTERNATIONAL,2017,43(3):3101-3106.
APA	Jin, P..,He, G..,Fang, Z. B..,Liu, M..,Xiao, D. Q..,...&Zhang, M..(2017).Annealing-temperature-modulated optical, electrical properties, and leakage current transport mechanism of sol-gel-processed high-k HfAlOX gate dielectrics.CERAMICS INTERNATIONAL,43(3),3101-3106.
MLA	Jin, P.,et al."Annealing-temperature-modulated optical, electrical properties, and leakage current transport mechanism of sol-gel-processed high-k HfAlOX gate dielectrics".CERAMICS INTERNATIONAL 43.3(2017):3101-3106.