Development of a wideband amplifier for cryogenic scanning tunneling microscopy

doi:10.1063/1.4990041

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	Development of a wideband amplifier for cryogenic scanning tunneling microscopy
	Zhang, Chao 1,2; Jeon, Hoyeon 1; Oh, Myungchul 1; Lee, Minjun 1; Kim, Sungmin 1; Yi, Sunwouk 1; Lee, Hanho 1; Zoh, Inhae 1; Yoo, Yongchan 1; Kuk, Young 1
刊名	REVIEW OF SCIENTIFIC INSTRUMENTS
	2017-06-01
卷号	88 期号:6 页码:1-3
DOI	10.1063/1.4990041
文献子类	Article
英文摘要	A wideband cryogenic amplifier has been developed for low temperature scanning tunneling microscopy. The amplifier consisting of a wideband complementary metal oxide semiconductor field effect transistors operational amplifier together with a feedback resistor of 100 k Omega and a capacitor is mounted within a 4 K Dewar. This amplifier has a wide bandwidth and is successfully applied to scanning tunneling microscopy applications at low temperatures down to similar to 7 K. The quality of the designed amplifier is validated by high resolution imaging. More importantly, the amplifier has also proved to be capable of performing scanning tunneling spectroscopy measurements, showing the detection of the Shockley surface state of the Au(111) surface and the superconducting gap of Nb(110). Published by AIP Publishing.
WOS研究方向	Instruments & Instrumentation ; Physics
语种	英语
WOS记录号	WOS:000404641300069
资助机构	National Research Foundation of Korea(NRF-2006-0093847 ; National Research Foundation of Korea(NRF-2006-0093847 ; National Research Foundation of Korea(NRF-2006-0093847 ; National Research Foundation of Korea(NRF-2006-0093847 ; Brain Korea 21 Plus Project of Korean Ministry of Education, Science and Technology ; Brain Korea 21 Plus Project of Korean Ministry of Education, Science and Technology ; Brain Korea 21 Plus Project of Korean Ministry of Education, Science and Technology ; Brain Korea 21 Plus Project of Korean Ministry of Education, Science and Technology ; NRF-2010-00349) ; NRF-2010-00349) ; NRF-2010-00349) ; NRF-2010-00349) ; National Research Foundation of Korea(NRF-2006-0093847 ; National Research Foundation of Korea(NRF-2006-0093847 ; National Research Foundation of Korea(NRF-2006-0093847 ; National Research Foundation of Korea(NRF-2006-0093847 ; Brain Korea 21 Plus Project of Korean Ministry of Education, Science and Technology ; Brain Korea 21 Plus Project of Korean Ministry of Education, Science and Technology ; Brain Korea 21 Plus Project of Korean Ministry of Education, Science and Technology ; Brain Korea 21 Plus Project of Korean Ministry of Education, Science and Technology ; NRF-2010-00349) ; NRF-2010-00349) ; NRF-2010-00349) ; NRF-2010-00349)
内容类型	期刊论文
源URL	[http://ir.hfcas.ac.cn:8080/handle/334002/31971]
专题	合肥物质科学研究院_中科院固体物理研究所
作者单位	1.Seoul Natl Univ, Dept Phys & Astron, Seoul 151747, South Korea 2.Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China
推荐引用方式 GB/T 7714	Zhang, Chao,Jeon, Hoyeon,Oh, Myungchul,et al. Development of a wideband amplifier for cryogenic scanning tunneling microscopy[J]. REVIEW OF SCIENTIFIC INSTRUMENTS,2017,88(6):1-3.
APA	Zhang, Chao.,Jeon, Hoyeon.,Oh, Myungchul.,Lee, Minjun.,Kim, Sungmin.,...&Kuk, Young.(2017).Development of a wideband amplifier for cryogenic scanning tunneling microscopy.REVIEW OF SCIENTIFIC INSTRUMENTS,88(6),1-3.
MLA	Zhang, Chao,et al."Development of a wideband amplifier for cryogenic scanning tunneling microscopy".REVIEW OF SCIENTIFIC INSTRUMENTS 88.6(2017):1-3.