Interface chemistry and electronic structure of ALD-derived HfAlO/Ge gate stacks revealed by X-ray photoelectron spectroscopy

doi:10.1016/j.jallcom.2017.05.018

CORC > 合肥物质科学研究院 > 中国科学院合肥物质科学研究院 > 中科院固体物理研究所

	Interface chemistry and electronic structure of ALD-derived HfAlO/Ge gate stacks revealed by X-ray photoelectron spectroscopy
	He, Gang 1; Jiang, Shanshan 1; Li, Wendong 1; Zheng, Changyong 1; He, Huaxin 1; Li, Jing 1; Sun, Zhaoqi 1; Liu, Yanmei 1; Liu, Mao 2
刊名	JOURNAL OF ALLOYS AND COMPOUNDS
	2017-09-05
卷号	716 期号:无页码:1-6
关键词	High-k Gate Dielectric Atomic-layer-deposition Interface Stability Phase Separation Annealing Temperature
DOI	10.1016/j.jallcom.2017.05.018
文献子类	Article
英文摘要	In this article, the effect of annealing temperature on the electronic structure and interface chemistry of HfAlO/Ge gate stack grown by atomic layer deposition (ALD) have been investigated systematically. Based on characterization from x-ray photoelectron spectroscopy (XPS), the evolution of electronic structure and interface chemistry of HfAlO/Ge gate stacks as functions of annealing temperature been detected. With increasing the annealing temperature from 500 to 600 degrees C, crystallization of HfAlO gate dielectrics has been observed. Annealing the samples on 700 degrees C leads to the reduction of HfAlO component and the formation of Al2O3, which brings about the improved interface stability. The optimized interface chemistry related to annealing temperature indicates the potential application for HfAlO gate dielectrics in future Ge-based microelectronic device. (C) 2017 Elsevier B.V. All rights reserved.
WOS关键词	ATOMIC-LAYER-DEPOSITION ; DIELECTRICS ; AL2O3 ; HFO2
WOS研究方向	Chemistry ; Materials Science ; Metallurgy & Metallurgical Engineering
语种	英语
WOS记录号	WOS:000402924500001
资助机构	National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Key projects of domestic and foreign research and training of outstanding young and middle aged backbone talents in Universities in Anhui Province(gxfxZD2016133) ; Key projects of domestic and foreign research and training of outstanding young and middle aged backbone talents in Universities in Anhui Province(gxfxZD2016133) ; Key projects of domestic and foreign research and training of outstanding young and middle aged backbone talents in Universities in Anhui Province(gxfxZD2016133) ; Key projects of domestic and foreign research and training of outstanding young and middle aged backbone talents in Universities in Anhui Province(gxfxZD2016133) ; 11474284) ; 11474284) ; 11474284) ; 11474284) ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Key projects of domestic and foreign research and training of outstanding young and middle aged backbone talents in Universities in Anhui Province(gxfxZD2016133) ; Key projects of domestic and foreign research and training of outstanding young and middle aged backbone talents in Universities in Anhui Province(gxfxZD2016133) ; Key projects of domestic and foreign research and training of outstanding young and middle aged backbone talents in Universities in Anhui Province(gxfxZD2016133) ; Key projects of domestic and foreign research and training of outstanding young and middle aged backbone talents in Universities in Anhui Province(gxfxZD2016133) ; 11474284) ; 11474284) ; 11474284) ; 11474284)
内容类型	期刊论文
源URL	[http://ir.hfcas.ac.cn:8080/handle/334002/31889]
专题	合肥物质科学研究院_中科院固体物理研究所
作者单位	1.Anhui Univ, Sch Phys & Mat Sci, Radiat Detect Mat & Devices Lab, Hefei 230601, Peoples R China 2.Chinese Acad Sci, Key Lab Mat Phys, Anhui Key Lab Nanomat & Nanostruct, Inst Solid State Phys, Hefei 230031, Peoples R China
推荐引用方式 GB/T 7714	He, Gang,Jiang, Shanshan,Li, Wendong,et al. Interface chemistry and electronic structure of ALD-derived HfAlO/Ge gate stacks revealed by X-ray photoelectron spectroscopy[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2017,716(无):1-6.
APA	He, Gang.,Jiang, Shanshan.,Li, Wendong.,Zheng, Changyong.,He, Huaxin.,...&Liu, Mao.(2017).Interface chemistry and electronic structure of ALD-derived HfAlO/Ge gate stacks revealed by X-ray photoelectron spectroscopy.JOURNAL OF ALLOYS AND COMPOUNDS,716(无),1-6.
MLA	He, Gang,et al."Interface chemistry and electronic structure of ALD-derived HfAlO/Ge gate stacks revealed by X-ray photoelectron spectroscopy".JOURNAL OF ALLOYS AND COMPOUNDS 716.无(2017):1-6.