Modulation of interfacial and electrical properties of ALD-derived HfAlO/Al2O3/Si gate stack by annealing temperature

doi:10.1016/j.jallcom.2016.08.289

CORC > 合肥物质科学研究院 > 中国科学院合肥物质科学研究院 > 中科院固体物理研究所

	Modulation of interfacial and electrical properties of ALD-derived HfAlO/Al2O3/Si gate stack by annealing temperature
	Gao, J.1,2 ; He, G.1; Liu, M.3; Lv, J. G.4; Sun, Z. Q.1; Zheng, C. Y.1; Jin, P.1; Xiao, D. Q.1; Chen, X. S.5
刊名	JOURNAL OF ALLOYS AND COMPOUNDS
	2017-01-15
卷号	691 期号:无页码:504-513
关键词	High-k Dielectric Interface Thermal Stability Atomic-layer-deposition Band Alignment Electrical Properties Leakage Current Mechanism
DOI	10.1016/j.jallcom.2016.08.289
文献子类	Article
英文摘要	In current work, effects of rapid thermal annealing on the interface chemical bonding states, band alignment, and electrical properties of atomic-layer-deposition-derived HfAlO/Al2O3 gate stack on Si substrates have been studied by X-ray photoemission spectroscopy (XPS), UVeVis transmission spectroscopy, and electrical measurements. XPS analyses have shown that HfAlO alloy and mixed silicate (Hf-Al-O-Si) increase after post-deposition annealing process. By means of UVeVis transmission spectroscopy measurements, reduction in band gap for 400 degrees C-annealed sample has been observed. Accordingly, reduction in the valence band offset and increase in the conduction band offset have been detected for Hf-AlO/Al2O3/Si gate stack annealed at 400 degrees C. Various current conduction mechanisms, such as Poole-Frenkel emission, Fowler-Nordheim (FN) tunneling, and space-charge-limited (SCL) conduction, have been analyzed. Detailed electrical measurements reveal that current conduct mechanisms is SCL conduction at lower field region and FN tunneling and SCL conduction are dominant conduction mechanism at higher field region. (C) 2016 Elsevier B.V. All rights reserved.
WOS关键词	PULSED-LASER DEPOSITION ; THERMAL-STABILITY ; BAND ALIGNMENT ; DIELECTRICS ; SILICON ; OXIDE ; HFO2 ; SUBSTRATE ; BARRIER ; MEMORY
WOS研究方向	Chemistry ; Materials Science ; Metallurgy & Metallurgical Engineering
语种	英语
WOS记录号	WOS:000386227900062
资助机构	National Key Project of Fundamental Research(2013CB632705 ; National Key Project of Fundamental Research(2013CB632705 ; National Key Project of Fundamental Research(2013CB632705 ; National Key Project of Fundamental Research(2013CB632705 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Outstanding Young Scientific Foundation of Anhui University(KJJQ1103) ; Outstanding Young Scientific Foundation of Anhui University(KJJQ1103) ; Outstanding Young Scientific Foundation of Anhui University(KJJQ1103) ; Outstanding Young Scientific Foundation of Anhui University(KJJQ1103) ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; Youth Science Research Foundation of Anhui University(KJJQ1103) ; Youth Science Research Foundation of Anhui University(KJJQ1103) ; Youth Science Research Foundation of Anhui University(KJJQ1103) ; Youth Science Research Foundation of Anhui University(KJJQ1103) ; 2012CB932303) ; 2012CB932303) ; 2012CB932303) ; 2012CB932303) ; 11474284 ; 11474284 ; 11474284 ; 11474284 ; 51472003) ; 51472003) ; 51472003) ; 51472003) ; National Key Project of Fundamental Research(2013CB632705 ; National Key Project of Fundamental Research(2013CB632705 ; National Key Project of Fundamental Research(2013CB632705 ; National Key Project of Fundamental Research(2013CB632705 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Outstanding Young Scientific Foundation of Anhui University(KJJQ1103) ; Outstanding Young Scientific Foundation of Anhui University(KJJQ1103) ; Outstanding Young Scientific Foundation of Anhui University(KJJQ1103) ; Outstanding Young Scientific Foundation of Anhui University(KJJQ1103) ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; Youth Science Research Foundation of Anhui University(KJJQ1103) ; Youth Science Research Foundation of Anhui University(KJJQ1103) ; Youth Science Research Foundation of Anhui University(KJJQ1103) ; Youth Science Research Foundation of Anhui University(KJJQ1103) ; 2012CB932303) ; 2012CB932303) ; 2012CB932303) ; 2012CB932303) ; 11474284 ; 11474284 ; 11474284 ; 11474284 ; 51472003) ; 51472003) ; 51472003) ; 51472003)
内容类型	期刊论文
源URL	[http://ir.hfcas.ac.cn:8080/handle/334002/30150]
专题	合肥物质科学研究院_中科院固体物理研究所
作者单位	1.Anhui Univ, Radiat Detect Mat & Devices Lab, Sch Phys & Mat Sci, Hefei 230601, Peoples R China 2.Anhui Univ Sci & Technol, Sch Sci, Huainan 232001, Peoples R China 3.Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Anhui Key Lab Nanomat & Nanostruct, Hefei 230031, Peoples R China 4.Hefei Normal Univ, Dept Phys & Elect Engn, Hefei 230061, Peoples R China 5.Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, 500 Yutian Rd, Shanghai 200083, Peoples R China
推荐引用方式 GB/T 7714	Gao, J.,He, G.,Liu, M.,et al. Modulation of interfacial and electrical properties of ALD-derived HfAlO/Al2O3/Si gate stack by annealing temperature[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2017,691(无):504-513.
APA	Gao, J..,He, G..,Liu, M..,Lv, J. G..,Sun, Z. Q..,...&Chen, X. S..(2017).Modulation of interfacial and electrical properties of ALD-derived HfAlO/Al2O3/Si gate stack by annealing temperature.JOURNAL OF ALLOYS AND COMPOUNDS,691(无),504-513.
MLA	Gao, J.,et al."Modulation of interfacial and electrical properties of ALD-derived HfAlO/Al2O3/Si gate stack by annealing temperature".JOURNAL OF ALLOYS AND COMPOUNDS 691.无(2017):504-513.