Effect of Ga Addition on Morphology and Recovery of Primary Si During Al-Si Alloy Solidification Refining

doi:10.1515/htmp-2014-0130

CORC > 合肥物质科学研究院 > 中国科学院合肥物质科学研究院 > 中科院等离子体物理研究所

	Effect of Ga Addition on Morphology and Recovery of Primary Si During Al-Si Alloy Solidification Refining
	Li, Jingwei; Bai, Xiaolong; Li, Yanlei; Ban, Boyuan; Chen, Jian
刊名	HIGH TEMPERATURE MATERIALS AND PROCESSES
	2015-12-01
卷号	34 期号:8 页码:833-838
关键词	Al-si-ga Alloy Gallium Addition Size Distribution Primary Si Recovery Rate
DOI	10.1515/htmp-2014-0130
文献子类	Article
英文摘要	The effect of Ga addition on alloy macrostructure, morphology and recovery rate of primary Si during the Al-Si-Ga alloy solvent refining process of silicon was studied in this work. The addition of Ga to Al-Si alloy could change the morphology of the primary Si. The average plate thickness of the primary Si increases with increase of Ga content. With the increase of Ga content, the average plate length of the primary Si crystals becomes larger when the Ga content is less than 5% in the Al-30% Si-xGa alloy, but becomes smaller when the Ga content exceeds 5%. Al-Si-Ga alloys consist of three types, primary Si, GaxAl1-x, (alpha-Al + Si + beta-Ga) eutectic. (111) is the preferred growth surface of the plate-like primary Si. The recovery rate of the primary Si increases with the increase of Ga content. When the Ga content increased to 20% in Al-30% Si-xGa alloy, the relative recovery rate of the primary Si increased to 50.41% than that in Al-30% Si alloy.
WOS关键词	SILICON ; MELT ; PURIFICATION
WOS研究方向	Materials Science
语种	英语
WOS记录号	WOS:000365345700012
资助机构	National Natural Science Foundation of China(51404231 ; National Natural Science Foundation of China(51404231 ; National Natural Science Foundation of China(51404231 ; National Natural Science Foundation of China(51404231 ; National Natural Science Foundation of China(51404231 ; National Natural Science Foundation of China(51404231 ; National Natural Science Foundation of China(51404231 ; National Natural Science Foundation of China(51404231 ; Anhui Provincial Natural Science Foundation(1508085QE81) ; Anhui Provincial Natural Science Foundation(1508085QE81) ; Anhui Provincial Natural Science Foundation(1508085QE81) ; Anhui Provincial Natural Science Foundation(1508085QE81) ; Anhui Provincial Natural Science Foundation(1508085QE81) ; Anhui Provincial Natural Science Foundation(1508085QE81) ; Anhui Provincial Natural Science Foundation(1508085QE81) ; Anhui Provincial Natural Science Foundation(1508085QE81) ; China Postdoctoral Science Foundation(2014M561846) ; China Postdoctoral Science Foundation(2014M561846) ; China Postdoctoral Science Foundation(2014M561846) ; China Postdoctoral Science Foundation(2014M561846) ; China Postdoctoral Science Foundation(2014M561846) ; China Postdoctoral Science Foundation(2014M561846) ; China Postdoctoral Science Foundation(2014M561846) ; China Postdoctoral Science Foundation(2014M561846) ; 100 Talent Program of Chinese Academy of Sciences ; 100 Talent Program of Chinese Academy of Sciences ; 100 Talent Program of Chinese Academy of Sciences ; 100 Talent Program of Chinese Academy of Sciences ; 100 Talent Program of Chinese Academy of Sciences ; 100 Talent Program of Chinese Academy of Sciences ; 100 Talent Program of Chinese Academy of Sciences ; 100 Talent Program of Chinese Academy of Sciences ; Science Fund of Institute of Plasma Physics, Chinese Academy of Sciences(095YZ31222 ; Science Fund of Institute of Plasma Physics, Chinese Academy of Sciences(095YZ31222 ; Science Fund of Institute of Plasma Physics, Chinese Academy of Sciences(095YZ31222 ; Science Fund of Institute of Plasma Physics, Chinese Academy of Sciences(095YZ31222 ; Science Fund of Institute of Plasma Physics, Chinese Academy of Sciences(095YZ31222 ; Science Fund of Institute of Plasma Physics, Chinese Academy of Sciences(095YZ31222 ; Science Fund of Institute of Plasma Physics, Chinese Academy of Sciences(095YZ31222 ; Science Fund of Institute of Plasma Physics, Chinese Academy of Sciences(095YZ31222 ; 51474201) ; 51474201) ; 51474201) ; 51474201) ; 51474201) ; 51474201) ; 51474201) ; 51474201) ; Y35QT10894) ; Y35QT10894) ; Y35QT10894) ; Y35QT10894) ; Y35QT10894) ; Y35QT10894) ; Y35QT10894) ; Y35QT10894) ; National Natural Science Foundation of China(51404231 ; National Natural Science Foundation of China(51404231 ; National Natural Science Foundation of China(51404231 ; National Natural Science Foundation of China(51404231 ; National Natural Science Foundation of China(51404231 ; National Natural Science Foundation of China(51404231 ; National Natural Science Foundation of China(51404231 ; National Natural Science Foundation of China(51404231 ; Anhui Provincial Natural Science Foundation(1508085QE81) ; Anhui Provincial Natural Science Foundation(1508085QE81) ; Anhui Provincial Natural Science Foundation(1508085QE81) ; Anhui Provincial Natural Science Foundation(1508085QE81) ; Anhui Provincial Natural Science Foundation(1508085QE81) ; Anhui Provincial Natural Science Foundation(1508085QE81) ; Anhui Provincial Natural Science Foundation(1508085QE81) ; Anhui Provincial Natural Science Foundation(1508085QE81) ; China Postdoctoral Science Foundation(2014M561846) ; China Postdoctoral Science Foundation(2014M561846) ; China Postdoctoral Science Foundation(2014M561846) ; China Postdoctoral Science Foundation(2014M561846) ; China Postdoctoral Science Foundation(2014M561846) ; China Postdoctoral Science Foundation(2014M561846) ; China Postdoctoral Science Foundation(2014M561846) ; China Postdoctoral Science Foundation(2014M561846) ; 100 Talent Program of Chinese Academy of Sciences ; 100 Talent Program of Chinese Academy of Sciences ; 100 Talent Program of Chinese Academy of Sciences ; 100 Talent Program of Chinese Academy of Sciences ; 100 Talent Program of Chinese Academy of Sciences ; 100 Talent Program of Chinese Academy of Sciences ; 100 Talent Program of Chinese Academy of Sciences ; 100 Talent Program of Chinese Academy of Sciences ; Science Fund of Institute of Plasma Physics, Chinese Academy of Sciences(095YZ31222 ; Science Fund of Institute of Plasma Physics, Chinese Academy of Sciences(095YZ31222 ; Science Fund of Institute of Plasma Physics, Chinese Academy of Sciences(095YZ31222 ; Science Fund of Institute of Plasma Physics, Chinese Academy of Sciences(095YZ31222 ; Science Fund of Institute of Plasma Physics, Chinese Academy of Sciences(095YZ31222 ; Science Fund of Institute of Plasma Physics, Chinese Academy of Sciences(095YZ31222 ; Science Fund of Institute of Plasma Physics, Chinese Academy of Sciences(095YZ31222 ; Science Fund of Institute of Plasma Physics, Chinese Academy of Sciences(095YZ31222 ; 51474201) ; 51474201) ; 51474201) ; 51474201) ; 51474201) ; 51474201) ; 51474201) ; 51474201) ; Y35QT10894) ; Y35QT10894) ; Y35QT10894) ; Y35QT10894) ; Y35QT10894) ; Y35QT10894) ; Y35QT10894) ; Y35QT10894)
内容类型	期刊论文
源URL	[http://ir.hfcas.ac.cn:8080/handle/334002/30232]
专题	合肥物质科学研究院_中科院等离子体物理研究所
作者单位	Chinese Acad Sci, Inst Plasma Phys, Key Lab Novel Thin Film Solar Cells, Hefei 230031, Peoples R China
推荐引用方式 GB/T 7714	Li, Jingwei,Bai, Xiaolong,Li, Yanlei,et al. Effect of Ga Addition on Morphology and Recovery of Primary Si During Al-Si Alloy Solidification Refining[J]. HIGH TEMPERATURE MATERIALS AND PROCESSES,2015,34(8):833-838.
APA	Li, Jingwei,Bai, Xiaolong,Li, Yanlei,Ban, Boyuan,&Chen, Jian.(2015).Effect of Ga Addition on Morphology and Recovery of Primary Si During Al-Si Alloy Solidification Refining.HIGH TEMPERATURE MATERIALS AND PROCESSES,34(8),833-838.
MLA	Li, Jingwei,et al."Effect of Ga Addition on Morphology and Recovery of Primary Si During Al-Si Alloy Solidification Refining".HIGH TEMPERATURE MATERIALS AND PROCESSES 34.8(2015):833-838.