New design of upper waveguide with unintentionally doped InGaN layer for InGaN-based laser diode

	New design of upper waveguide with unintentionally doped InGaN layer for InGaN-based laser diode
	Feng Liang; Degang Zhao; Desheng Jiang; Zongshun Liu; Jianjun Zhu; Ping Chen; Jing Yang; Wei Liu; Xiang Li; Shuangtao Liu
刊名	Optics and Laser Technology
	2017
卷号	97 页码:284–289
学科主题	光电子学
公开日期	2018-07-11
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/28766]
专题	半导体研究所_光电子研究发展中心
推荐引用方式 GB/T 7714	Feng Liang,Degang Zhao,Desheng Jiang,et al. New design of upper waveguide with unintentionally doped InGaN layer for InGaN-based laser diode[J]. Optics and Laser Technology,2017,97:284–289.
APA	Feng Liang.,Degang Zhao.,Desheng Jiang.,Zongshun Liu.,Jianjun Zhu.,...&Mo Li.(2017).New design of upper waveguide with unintentionally doped InGaN layer for InGaN-based laser diode.Optics and Laser Technology,97,284–289.
MLA	Feng Liang,et al."New design of upper waveguide with unintentionally doped InGaN layer for InGaN-based laser diode".Optics and Laser Technology 97(2017):284–289.