Quantum confinement modulation on the performance of nanometer thin body GaSb/InAs tunnel field-effect transistors

	Quantum confinement modulation on the performance of nanometer thin body GaSb/InAs tunnel field-effect transistors
	Zhi Wang; Liwei Wang; Yunfei En; Xiang-Wei Jiang
刊名	Journal of Applied Physics
	2017
卷号	121 期号:22 页码:1-5
学科主题	半导体物理
公开日期	2018-06-15
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/28576]
专题	半导体研究所_半导体超晶格国家重点实验室
推荐引用方式 GB/T 7714	Zhi Wang,Liwei Wang,Yunfei En,et al. Quantum confinement modulation on the performance of nanometer thin body GaSb/InAs tunnel field-effect transistors[J]. Journal of Applied Physics,2017,121(22):1-5.
APA	Zhi Wang,Liwei Wang,Yunfei En,&Xiang-Wei Jiang.(2017).Quantum confinement modulation on the performance of nanometer thin body GaSb/InAs tunnel field-effect transistors.Journal of Applied Physics,121(22),1-5.
MLA	Zhi Wang,et al."Quantum confinement modulation on the performance of nanometer thin body GaSb/InAs tunnel field-effect transistors".Journal of Applied Physics 121.22(2017):1-5.