Synthesis of High-Quality Graphene and Hexagonal Boron Nitride Monolayer In-Plane Heterostructure on Cu-Ni Alloy

	Synthesis of High-Quality Graphene and Hexagonal Boron Nitride Monolayer In-Plane Heterostructure on Cu-Ni Alloy
	Sun, Julong 6; Xie, Xiaoming 1,2,7; Lu, Guangyuan 2,3,4,7; Wu, Tianru 2,7; Yang, Peng 5; Yang, Yingchao 3; Jin, Zehua 3; Chen, Weibing 3; Jia, Shuai 3; Wang, Haomin 2,7
刊名	ADVANCED SCIENCE
	2017-09-01
卷号	4 期号:9
关键词	chemical vapor deposition Cu-Ni alloy graphene and h-BN in-plane heterostructures high quality
英文摘要	Graphene/hexagonal boron nitride (h-BN) monolayer in-plane heterostructure offers a novel material platform for both fundamental research and device applications. To obtain such a heterostructure in high quality via controllable synthetic approaches is still challenging. In this work, in-plane epitaxy of graphene/h-BN heterostructure is demonstrated on Cu-Ni substrates. The introduction of nickel to copper substrate not only enhances the capability of decomposing polyaminoborane residues but also promotes graphene growth via isothermal segregation. On the alloy surface partially covered by h-BN, graphene is found to nucleate at the corners of the as-formed h-BN grains, and the high growth rate for graphene minimizes the damage of graphene-growth process on h-BN lattice. As a result, high-quality graphene/h-BN in-plane heterostructure with epitaxial relationship can be formed, which is supported by extensive characterizations. Photodetector device applications are demonstrated based on the in-plane heterostructure. The success will have important impact on future research and applications based on this unique material platform.
WOS标题词	Science & Technology ; Physical Sciences ; Technology
类目[WOS]	Chemistry, Multidisciplinary ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
研究领域[WOS]	Chemistry ; Science & Technology - Other Topics ; Materials Science
关键词[WOS]	CHEMICAL-VAPOR-DEPOSITION ; BAND-GAP ; ATMOSPHERIC-PRESSURE ; STACKED GRAPHENE ; GROWTH ; FILMS ; INTERFACE ; DOMAINS ; LAYERS ; FOILS
收录类别	SCI
语种	英语
WOS记录号	WOS:000411148100015
内容类型	期刊论文
源URL	[http://cas-ir.dicp.ac.cn/handle/321008/150081]
专题	大连化学物理研究所_中国科学院大连化学物理研究所
作者单位	1.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 200031, Peoples R China 2.CAS Ctr Excellence Superconducting Elect CENSE, Shanghai 200050, Peoples R China 3.Rice Univ, Dept Mat Sci & NanoEngn, Houston, TX 77005 USA 4.Univ Chinese Acad Sci, Sch Elect Elect & Commun Engn, Beijing 100049, Peoples R China 5.Cent S Univ, Sch Phys & Elect, Changsha 410083, Hunan, Peoples R China 6.Chinese Acad Sci, Dalian Inst Chem Phys, State Key Lab Mol React Dynam, Dalian 116023, Peoples R China 7.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
推荐引用方式 GB/T 7714	Sun, Julong,Xie, Xiaoming,Lu, Guangyuan,et al. Synthesis of High-Quality Graphene and Hexagonal Boron Nitride Monolayer In-Plane Heterostructure on Cu-Ni Alloy[J]. ADVANCED SCIENCE,2017,4(9).
APA	Sun, Julong.,Xie, Xiaoming.,Lu, Guangyuan.,Wu, Tianru.,Yang, Peng.,...&Jiang, Mianheng.(2017).Synthesis of High-Quality Graphene and Hexagonal Boron Nitride Monolayer In-Plane Heterostructure on Cu-Ni Alloy.ADVANCED SCIENCE,4(9).
MLA	Sun, Julong,et al."Synthesis of High-Quality Graphene and Hexagonal Boron Nitride Monolayer In-Plane Heterostructure on Cu-Ni Alloy".ADVANCED SCIENCE 4.9(2017).