Charge-Transfer Dynamics Promoted by Hole Trap States in CdSe Quantum Dots-Ni2+ Photocatalytic System
Ye, Yun1,2; Wang, Xiuli2; Ye, Sheng2; Xu, Yuxing1,2; Feng, Zhaochi2; Li, Can2
刊名JOURNAL OF PHYSICAL CHEMISTRY C
2017-08-17
卷号121期号:32页码:17112-17120
英文摘要Manipulation of the photoinduced hole dynamics is a key strategy to improve the H-2 evolution efficiency in quantum dots (QDs)-based photocatalytic systems. The ultrafast hole trapping by surface states of the QDs is beneficial to electron transfer but retards the trapped hole transfer. Whether ultrafast hole trapping is beneficial to the photo catalytic H2 evolution activity deserves to be investigated. We employed two types of CdSe QDs, QDs-1 and QDs-2, with tuned surface hole trap states to investigate the effect of ultrafast hole trapping on charge-transfer dynamics in the photocatalytic system. QDs-1 possesses higher density of surface hole trap states than QDs-2. Compared with QDs-2, the transfer dynamics of free electrons in QDs-1 to the proton reduction catalyst, Ni-2, is more promoted by hole trapping, characterized by the transient absorption spectroscopy and photoluminescence techniques. Interestingly, the free hole transfer from QDs-1 to the sacrificial reagent, ascorbic acid (AA), was also improved more. Moreover, the surface defects of the QDs serve as binding sites for Ni2+ and AA, further promoting the electron transfer and hole removal dynamics, respectively. Our results illustrate that the ultrafast hole trapping increases the H2 production activity in the actual CdSe QDs Ni2+ photocatalytic system.
WOS标题词Science & Technology ; Physical Sciences ; Technology
类目[WOS]Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
研究领域[WOS]Chemistry ; Science & Technology - Other Topics ; Materials Science
关键词[WOS]ULTRAFAST ELECTRON-TRANSFER ; SEMICONDUCTOR NANOCRYSTALS ; SURFACE-CHEMISTRY ; NANOROD HETEROSTRUCTURES ; CARRIER DYNAMICS ; METHYLENE-BLUE ; H-2 GENERATION ; DOTS ; PHOTOLUMINESCENCE ; SEPARATION
收录类别SCI
语种英语
WOS记录号WOS:000408179500010
内容类型期刊论文
源URL[http://cas-ir.dicp.ac.cn/handle/321008/150005]  
专题大连化学物理研究所_中国科学院大连化学物理研究所
作者单位1.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
2.Chinese Acad Sci, Dalian Natl Lab Clean Energy, State Key Lab Catalysis, Dalian Inst Chem Phys, Dalian 116023, Peoples R China
推荐引用方式
GB/T 7714
Ye, Yun,Wang, Xiuli,Ye, Sheng,et al. Charge-Transfer Dynamics Promoted by Hole Trap States in CdSe Quantum Dots-Ni2+ Photocatalytic System[J]. JOURNAL OF PHYSICAL CHEMISTRY C,2017,121(32):17112-17120.
APA Ye, Yun,Wang, Xiuli,Ye, Sheng,Xu, Yuxing,Feng, Zhaochi,&Li, Can.(2017).Charge-Transfer Dynamics Promoted by Hole Trap States in CdSe Quantum Dots-Ni2+ Photocatalytic System.JOURNAL OF PHYSICAL CHEMISTRY C,121(32),17112-17120.
MLA Ye, Yun,et al."Charge-Transfer Dynamics Promoted by Hole Trap States in CdSe Quantum Dots-Ni2+ Photocatalytic System".JOURNAL OF PHYSICAL CHEMISTRY C 121.32(2017):17112-17120.
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