Temperature field simulation of phase change material/metal bilayer structure upon femtosecond laser pulse irradiation

CORC > 上海光学精密机械研究所 > 中国科学院上海光学精密机械研究所 > 高密度光存储技术实验室

	Temperature field simulation of phase change material/metal bilayer structure upon femtosecond laser pulse irradiation
	Wu, Yiqun; Wang, Yang; Jiang, Minghui; Lei, Kai
	2016
通讯作者	ywang@siom.ac.cn
英文摘要	The thermal transmission process induced by single-shot femtosecond laser pulses in Sb70Te30 phase change thin films with or without a Ag thermal-conductive layer was studied numerically with a two-temperature model. The distribution of electron and lattice temperatures was calculated by a one-dimensional finite difference method. The different temperature evolution characteristics on different time scales (from several picoseconds, to tens of picoseconds and to several nanoseconds) are discussed based on the electron-phonon coupling theory. The influence of a special point in the lattice temperature evolution curves on the crystallization time of phase change thin films is analyzed. The results will be helpful to the deeper understanding of the ultrafast phase transition mechanism of phase change memory materials.
会议录	2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage
语种	英语
ISSN号	0277-786X
内容类型	会议论文
源URL	[http://ir.siom.ac.cn/handle/181231/27430]
专题	上海光学精密机械研究所_高密度光存储技术实验室
作者单位	中国科学院上海光学精密机械研究所
推荐引用方式 GB/T 7714	Wu, Yiqun,Wang, Yang,Jiang, Minghui,et al. Temperature field simulation of phase change material/metal bilayer structure upon femtosecond laser pulse irradiation[C]. 见:.