Silicon carbide doped Sb2Te3 nanomaterial for fast-speed phase change memory

CORC > 上海光学精密机械研究所 > 中国科学院上海光学精密机械研究所 > 高密度光存储技术实验室

	Silicon carbide doped Sb2Te3 nanomaterial for fast-speed phase change memory
	Meng, Yun; Wu, Liangcai; Song, Zhitang; Wen, Shuai; Jiang, Minghui; Wei, Jingsong; Wang, Yang
刊名	Mater. Lett.
	2017
卷号	201 页码:109
通讯作者	wuliangcai@mail.sim.ac.cn ; ywang@siom.ac.cn
英文摘要	In this study, doping of Sb2Te3 with silicon carbide has been proposed to enhance the optical and electrical properties of Sb2Te3. The silicon carbide-doped Sb2Te3 (Sb2Te3-SiC)-based phase change memory cell can be triggered by a 10 ns electric pulse, indicating its excellent electrical properties. Furthermore, ferntosecond pulses are used to study the reversible phase transition processes. The large reflectivity ratio of Sb2Te3-SiC is beneficial for achieving distinguishable logical states in optical applications. X-ray diffraction and transmission electron microscopy results show the SiC doping plays an important role in refining the grain size of Sb2Te3, producing smaller grain. (C) 2017 Elsevier B.V. All rights reserved.
收录类别	SCI
资助信息	National Key Basic Research Program of China [2011CBA00607, 2011CBA00602]; National Natural Science Foundation of China [61076121, 61504157, 51472258, 51672292, 61627826, 61137002]
WOS记录号	WOS:000402359900028
内容类型	期刊论文
源URL	[http://ir.siom.ac.cn/handle/181231/28255]
专题	上海光学精密机械研究所_高密度光存储技术实验室
作者单位	中国科学院上海光学精密机械研究所
推荐引用方式 GB/T 7714	Meng, Yun,Wu, Liangcai,Song, Zhitang,et al. Silicon carbide doped Sb2Te3 nanomaterial for fast-speed phase change memory[J]. Mater. Lett.,2017,201:109.
APA	Meng, Yun.,Wu, Liangcai.,Song, Zhitang.,Wen, Shuai.,Jiang, Minghui.,...&Wang, Yang.(2017).Silicon carbide doped Sb2Te3 nanomaterial for fast-speed phase change memory.Mater. Lett.,201,109.
MLA	Meng, Yun,et al."Silicon carbide doped Sb2Te3 nanomaterial for fast-speed phase change memory".Mater. Lett. 201(2017):109.