Optoelectronic properties in the terahertz of femtosecond-laser-ablated GaAs

	Optoelectronic properties in the terahertz of femtosecond-laser-ablated GaAs
	Madeo, J.; Margiolakis, A.; Zhao, Z.-Y.; Hale, P.J.; Man, M.K.L.; Zhao, Q.-Z.; Peng, W.; Shi, W.-Z.; Dani, K.M.; Mariserla, Bala Murali Krishna
	2016
英文摘要	We measure the opto-electronic properties of femtosecond-laser-ablated GaAs and demonstrate its utility towards THz devices. In particular, we show that laser-ablated THz antennas are 65% more efficient than non-ablated antennas at high powers. Our results demonstrate the possibility of using femtosecond-laser-ablation as a cost-effective technique to engineer material properties for THz devices. ? 2016 IEEE.
会议录	2016 Progress In Electromagnetics Research Symposium, PIERS 2016 - Proceedings
语种	英语
内容类型	会议论文
源URL	[http://ir.siom.ac.cn/handle/181231/27377]
专题	上海光学精密机械研究所_强场激光物理国家重点实验室
推荐引用方式 GB/T 7714	Madeo, J.,Margiolakis, A.,Zhao, Z.-Y.,et al. Optoelectronic properties in the terahertz of femtosecond-laser-ablated GaAs[C]. 见:.