Exciton emission of quasi-2D InGaN in GaN matrix grown by molecular beam epitaxy

	Exciton emission of quasi-2D InGaN in GaN matrix grown by molecular beam epitaxy
	Dingyu Ma; Xin Rong; Xiantong Zheng; Weiying Wang; Ping Wang; Tobias Schulz; Martin Albrecht; Sebastian Metzner; Mathias Müller; Olga August
刊名	Scientific Reports
	2017
卷号	7 页码:46420
学科主题	半导体材料
公开日期	2018-05-23
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/28323]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Dingyu Ma,Xin Rong,Xiantong Zheng,et al. Exciton emission of quasi-2D InGaN in GaN matrix grown by molecular beam epitaxy[J]. Scientific Reports,2017,7:46420.
APA	Dingyu Ma.,Xin Rong.,Xiantong Zheng.,Weiying Wang.,Ping Wang.,...&Xinqiang Wang.(2017).Exciton emission of quasi-2D InGaN in GaN matrix grown by molecular beam epitaxy.Scientific Reports,7,46420.
MLA	Dingyu Ma,et al."Exciton emission of quasi-2D InGaN in GaN matrix grown by molecular beam epitaxy".Scientific Reports 7(2017):46420.