Boron depth profiles in a-Si1-xCx:H(B) films after thermal annealing

	Boron depth profiles in a-Si1-xCx:H(B) films after thermal annealing
	Liao, Changgeng; Zheng, Zhihao; Wang, Yongqiang; Yang, Shengsheng
	1991
会议名称	1991 International Conference on Thin Film Physics and Applications
会议日期	April 15, 1991 - April 17, 1991
会议地点	Shanghai, China
关键词	Semiconducting Silicon Heat Treatment Annealing Semiconducting Films Photovoltaic Effects Semiconductor Materials Doping Solar Cells Silicon Boron Doped Silicon Hydrogenated Amorphous Silicon Thermal Annealing Wind Band Gap Semiconductors
卷号	42
期号	16
页码	1071-1072
通讯作者	Liao, Changgeng
会议录	Vacuum
会议录出版地	OXFORD
学科主题	Electricity and Magnetism; Electric Batteries and Fuel Cells; Electronic and Thermionic Materials; Electronic Components and Tubes
语种	英语
ISSN号	0042-207X
内容类型	会议论文
源URL	[http://ir.lzu.edu.cn/handle/262010/184890]
专题	核科学与技术学院_会议论文
推荐引用方式 GB/T 7714	Liao, Changgeng,Zheng, Zhihao,Wang, Yongqiang,et al. Boron depth profiles in a-Si1-xCx:H(B) films after thermal annealing[C]. 见:1991 International Conference on Thin Film Physics and Applications. Shanghai, China. April 15, 1991 - April 17, 1991.