H-ion Irradiation-induced Annealing in He-ion Implanted 4H-SiC

	H-ion Irradiation-induced Annealing in He-ion Implanted 4H-SiC
	Han, Y; Li, BS; Wang, ZG; Peng, JX; Sun, JR; Wei, KF; Yao, CF; Gao, N; Gao, X; Pang, LL
刊名	CHINESE PHYSICS LETTERS
	2017-01
卷号	34 期号:1-1
ISSN号	0256-307X
通讯作者	Li, BS ; Wang, ZG (reprint author), Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China.
学科主题	Physics
出版地	BRISTOL
语种	英语
WOS记录号	WOS:000394544300005
内容类型	期刊论文
源URL	[http://ir.lzu.edu.cn/handle/262010/189177]
专题	核科学与技术学院_期刊论文
推荐引用方式 GB/T 7714	Han, Y,Li, BS,Wang, ZG,et al. H-ion Irradiation-induced Annealing in He-ion Implanted 4H-SiC[J]. CHINESE PHYSICS LETTERS,2017,34(1-1).
APA	Han, Y.,Li, BS.,Wang, ZG.,Peng, JX.,Sun, JR.,...&Ma, ZW.(2017).H-ion Irradiation-induced Annealing in He-ion Implanted 4H-SiC.CHINESE PHYSICS LETTERS,34(1-1).
MLA	Han, Y,et al."H-ion Irradiation-induced Annealing in He-ion Implanted 4H-SiC".CHINESE PHYSICS LETTERS 34.1-1(2017).