Lattice damage and compositional changes in Xe ion irradiated InxGa1-xN (x=0.32-1.0) single crystals

	Lattice damage and compositional changes in Xe ion irradiated InxGa1-xN (x=0.32-1.0) single crystals
	Zhang, LM; Jiang, WL; Dissanayake, A; Peng, JX; Ai, WS; Zhang, JD; Zhu, ZH; Wang, TS; Shutthanandan, V
刊名	JOURNAL OF APPLIED PHYSICS
	2016-06-28
卷号	119 期号:24
ISSN号	0021-8979
其他题名	Lattice damage and compositional changes in Xe ion irradiated InxGa1-xN (x = 0.32-1.0) single crystals
通讯作者	Zhang, LM (reprint author), Lanzhou Univ, Sch Nucl Sci & Technol, Lanzhou 730000, Gansu, Peoples R China.
学科主题	Physics
出版地	MELVILLE
语种	英语
WOS记录号	WOS:000379163800058
内容类型	期刊论文
源URL	[http://ir.lzu.edu.cn/handle/262010/181038]
专题	核科学与技术学院_期刊论文
推荐引用方式 GB/T 7714	Zhang, LM,Jiang, WL,Dissanayake, A,et al. Lattice damage and compositional changes in Xe ion irradiated InxGa1-xN (x=0.32-1.0) single crystals[J]. JOURNAL OF APPLIED PHYSICS,2016,119(24).
APA	Zhang, LM.,Jiang, WL.,Dissanayake, A.,Peng, JX.,Ai, WS.,...&Shutthanandan, V.(2016).Lattice damage and compositional changes in Xe ion irradiated InxGa1-xN (x=0.32-1.0) single crystals.JOURNAL OF APPLIED PHYSICS,119(24).
MLA	Zhang, LM,et al."Lattice damage and compositional changes in Xe ion irradiated InxGa1-xN (x=0.32-1.0) single crystals".JOURNAL OF APPLIED PHYSICS 119.24(2016).