STUDY OF BORON DEPTH PROFILES IN IPI AMORPHOUS-SILICON FILMS AFTER THERMAL ANNEALING USING THE (P,ALPHA) REACTION

	STUDY OF BORON DEPTH PROFILES IN IPI AMORPHOUS-SILICON FILMS AFTER THERMAL ANNEALING USING THE (P,ALPHA) REACTION
	LIAO, CG; ZHENG, ZH; WANG, YQ; YANG, SS; JIANG, H
刊名	VACUUM
	1991
卷号	42 期号:17 页码:1129-1132
ISSN号	0042-207X
通讯作者	LIAO, CG (reprint author), LANZHOU UNIV,DEPT MODERN PHYS,POB 44,LANZHOU 730001,PEOPLES R CHINA.
学科主题	Materials Science; Physics
出版地	OXFORD
语种	英语
WOS记录号	WOS:A1991GR91300007
内容类型	期刊论文
源URL	[http://ir.lzu.edu.cn/handle/262010/116406]
专题	核科学与技术学院_期刊论文
推荐引用方式 GB/T 7714	LIAO, CG,ZHENG, ZH,WANG, YQ,et al. STUDY OF BORON DEPTH PROFILES IN IPI AMORPHOUS-SILICON FILMS AFTER THERMAL ANNEALING USING THE (P,ALPHA) REACTION[J]. VACUUM,1991,42(17):1129-1132.
APA	LIAO, CG,ZHENG, ZH,WANG, YQ,YANG, SS,&JIANG, H.(1991).STUDY OF BORON DEPTH PROFILES IN IPI AMORPHOUS-SILICON FILMS AFTER THERMAL ANNEALING USING THE (P,ALPHA) REACTION.VACUUM,42(17),1129-1132.
MLA	LIAO, CG,et al."STUDY OF BORON DEPTH PROFILES IN IPI AMORPHOUS-SILICON FILMS AFTER THERMAL ANNEALING USING THE (P,ALPHA) REACTION".VACUUM 42.17(1991):1129-1132.