Enhancement of magneto-photogalvanic effect in periodic GaAs dot arrays by p-n junctions coupling

	Enhancement of magneto-photogalvanic effect in periodic GaAs dot arrays by p-n junctions coupling
	Zhou, JK; Wang, T; Wang, W; Chen, SW; Cao, Y; Liu, HP; Si, MS; Gao, CX; Yang, DZ; Xue, DS
刊名	APPLIED PHYSICS LETTERS
	2016-12-05
卷号	109 期号:1-23
ISSN号	0003-6951
通讯作者	Yang, DZ (reprint author), Lanzhou Univ, Key Lab Magnetism & Magnet Mat, Minist Educ, Lanzhou 730000, Peoples R China.
学科主题	Physics
出版地	MELVILLE
语种	英语
WOS记录号	WOS:000390677700025
内容类型	期刊论文
源URL	[http://ir.lzu.edu.cn/handle/262010/189261]
专题	物理科学与技术学院_期刊论文
推荐引用方式 GB/T 7714	Zhou, JK,Wang, T,Wang, W,et al. Enhancement of magneto-photogalvanic effect in periodic GaAs dot arrays by p-n junctions coupling[J]. APPLIED PHYSICS LETTERS,2016,109(1-23).
APA	Zhou, JK.,Wang, T.,Wang, W.,Chen, SW.,Cao, Y.,...&Xue, DS.(2016).Enhancement of magneto-photogalvanic effect in periodic GaAs dot arrays by p-n junctions coupling.APPLIED PHYSICS LETTERS,109(1-23).
MLA	Zhou, JK,et al."Enhancement of magneto-photogalvanic effect in periodic GaAs dot arrays by p-n junctions coupling".APPLIED PHYSICS LETTERS 109.1-23(2016).