Two-dimensional electron gas (2DEG) mobility affected by the in mole fraction fluctuation in InxAl1-xN/GaN heterostructures

	Two-dimensional electron gas (2DEG) mobility affected by the in mole fraction fluctuation in InxAl1-xN/GaN heterostructures
	Liu, GP; Zhang, JF; Lu, KY; Chen, WJ; Tian, YH; Yang, JH
刊名	PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
	2016-09
卷号	83 页码:207-210
关键词	InAlN/GaN heterostructures Electron mobility Mole fraction fluctuation
ISSN号	1386-9477
其他题名	Two-dimensional electron gas (2DEG) mobility affected by the in mole fraction fluctuation in InxAl1−xN/GaN heterostructures
通讯作者	Liu, GP (reprint author), Lanzhou Univ, Sch Phys Sci & Technol, Inst Microelect, Lanzhou 730000, Gansu, Peoples R China. ; Liu, GP (reprint author), Lanzhou Univ, Sch Phys Sci & Technol, Key Lab Magnetism & Magnet Mat MOE, Lanzhou 730000, Gansu, Peoples R China.
学科主题	Science & Technology - Other Topics; Physics
语种	英语
WOS记录号	WOS:000380221400029
内容类型	期刊论文
源URL	[http://ir.lzu.edu.cn/handle/262010/181674]
专题	物理科学与技术学院_期刊论文
推荐引用方式 GB/T 7714	Liu, GP,Zhang, JF,Lu, KY,et al. Two-dimensional electron gas (2DEG) mobility affected by the in mole fraction fluctuation in InxAl1-xN/GaN heterostructures[J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES,2016,83:207-210.
APA	Liu, GP,Zhang, JF,Lu, KY,Chen, WJ,Tian, YH,&Yang, JH.(2016).Two-dimensional electron gas (2DEG) mobility affected by the in mole fraction fluctuation in InxAl1-xN/GaN heterostructures.PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES,83,207-210.
MLA	Liu, GP,et al."Two-dimensional electron gas (2DEG) mobility affected by the in mole fraction fluctuation in InxAl1-xN/GaN heterostructures".PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES 83(2016):207-210.