A theory study of the multiplication characteristics of InP/InGaAs avalanche photodiodes with double multiplication layers and double charge layers

	A theory study of the multiplication characteristics of InP/InGaAs avalanche photodiodes with double multiplication layers and double charge layers
	Liu, GP; Chen, WJ; Liu, LS; Jin, P; Tian, YH; Yang, JH
刊名	OPTICS COMMUNICATIONS
	2016-09-01
卷号	374 页码:114-118
关键词	In0.53Ga0.47As/InP avalanche photodiodes (APD) Dead space Excess noise factor Mean gain
ISSN号	0030-4018
通讯作者	Liu, GP (reprint author), Lanzhou Univ, Sch Phys Sci & Technol, Inst Microelect, Lanzhou 730000, Gansu, Peoples R China. ; Liu, GP (reprint author), Lanzhou Univ, Sch Phys Sci & Technol, Key Lab Magnetism & Magnet Mat MOE, Lanzhou 730000, Gansu, Peoples R China.
学科主题	Optics
语种	英语
WOS记录号	WOS:000377394700021
内容类型	期刊论文
源URL	[http://ir.lzu.edu.cn/handle/262010/181673]
专题	物理科学与技术学院_期刊论文
推荐引用方式 GB/T 7714	Liu, GP,Chen, WJ,Liu, LS,et al. A theory study of the multiplication characteristics of InP/InGaAs avalanche photodiodes with double multiplication layers and double charge layers[J]. OPTICS COMMUNICATIONS,2016,374:114-118.
APA	Liu, GP,Chen, WJ,Liu, LS,Jin, P,Tian, YH,&Yang, JH.(2016).A theory study of the multiplication characteristics of InP/InGaAs avalanche photodiodes with double multiplication layers and double charge layers.OPTICS COMMUNICATIONS,374,114-118.
MLA	Liu, GP,et al."A theory study of the multiplication characteristics of InP/InGaAs avalanche photodiodes with double multiplication layers and double charge layers".OPTICS COMMUNICATIONS 374(2016):114-118.