Theoretical study on the top- and enclosed-contacted single-layer MoS2 piezotronic transistors

	Theoretical study on the top- and enclosed-contacted single-layer MoS2 piezotronic transistors
	Liu, W; Zhou, YL; Zhang, AH; Zhang, Y; Wang, ZL
刊名	APPLIED PHYSICS LETTERS
	2016-05-02
卷号	108 期号:18
ISSN号	0003-6951
其他题名	Theoretical study on the top- and enclosed-contacted single-layer MoS2piezotronic transistors
通讯作者	Liu, W ; Wang, ZL (reprint author), Chinese Acad Sci, Natl Ctr Nanosci & Technol NCNST, Beijing Inst Nanoenergy & Nanosyst, Beijing 100083, Peoples R China. ; Wang, ZL (reprint author), Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA.
学科主题	Physics
语种	英语
WOS记录号	WOS:000377023300008
内容类型	期刊论文
源URL	[http://ir.lzu.edu.cn/handle/262010/181580]
专题	物理科学与技术学院_期刊论文
推荐引用方式 GB/T 7714	Liu, W,Zhou, YL,Zhang, AH,et al. Theoretical study on the top- and enclosed-contacted single-layer MoS2 piezotronic transistors[J]. APPLIED PHYSICS LETTERS,2016,108(18).
APA	Liu, W,Zhou, YL,Zhang, AH,Zhang, Y,&Wang, ZL.(2016).Theoretical study on the top- and enclosed-contacted single-layer MoS2 piezotronic transistors.APPLIED PHYSICS LETTERS,108(18).
MLA	Liu, W,et al."Theoretical study on the top- and enclosed-contacted single-layer MoS2 piezotronic transistors".APPLIED PHYSICS LETTERS 108.18(2016).