Toward Ultrahigh Red Light Responsive Organic FETs Utilizing Neodymium Phthalocyanine as Light Sensitive Material

	Toward Ultrahigh Red Light Responsive Organic FETs Utilizing Neodymium Phthalocyanine as Light Sensitive Material
	Sun, L; Li, Y; Ren, Q; Lv, WL; Zhang, JP; Luo, X; Zhao, FY; Chen, Z; Wen, ZW; Zhong, JK
刊名	IEEE TRANSACTIONS ON ELECTRON DEVICES
	2016-01
卷号	63 期号:1 页码:452-458
关键词	Gate dielectric hybrid bulk-planar heterojunction neodymium phthalocyanine (NdPc2) photoresponsive organic FET (photOFET) photoresponsivity poly(vinyl alcohol) (PVA) red light
ISSN号	0018-9383
通讯作者	Sun, L (reprint author), Lanzhou Univ, Sch Phys Sci & Technol, Inst Microelect, Lanzhou 730000, Peoples R China.
学科主题	Engineering; Physics
语种	英语
WOS记录号	WOS:000367259600061
内容类型	期刊论文
源URL	[http://ir.lzu.edu.cn/handle/262010/181447]
专题	物理科学与技术学院_期刊论文
推荐引用方式 GB/T 7714	Sun, L,Li, Y,Ren, Q,et al. Toward Ultrahigh Red Light Responsive Organic FETs Utilizing Neodymium Phthalocyanine as Light Sensitive Material[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2016,63(1):452-458.
APA	Sun, L.,Li, Y.,Ren, Q.,Lv, WL.,Zhang, JP.,...&Liu, XY.(2016).Toward Ultrahigh Red Light Responsive Organic FETs Utilizing Neodymium Phthalocyanine as Light Sensitive Material.IEEE TRANSACTIONS ON ELECTRON DEVICES,63(1),452-458.
MLA	Sun, L,et al."Toward Ultrahigh Red Light Responsive Organic FETs Utilizing Neodymium Phthalocyanine as Light Sensitive Material".IEEE TRANSACTIONS ON ELECTRON DEVICES 63.1(2016):452-458.