Improvement of resistive switching fluctuations by using one step lift-off process

	Improvement of resistive switching fluctuations by using one step lift-off process
	Li, YT; Gao, XP; Fu, LP; Yuan, P; Wang, H; Tao, CL
刊名	PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
	2015-10
卷号	9 期号:10 页码:594-596
关键词	resistive switching lift-off process ZrO2 copper RRAM
ISSN号	1862-6254
通讯作者	Li, YT (reprint author), Lanzhou Univ, Inst Microelect, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China.
学科主题	Materials Science; Physics
语种	英语
WOS记录号	WOS:000363266800008
内容类型	期刊论文
源URL	[http://ir.lzu.edu.cn/handle/262010/181358]
专题	物理科学与技术学院_期刊论文
推荐引用方式 GB/T 7714	Li, YT,Gao, XP,Fu, LP,et al. Improvement of resistive switching fluctuations by using one step lift-off process[J]. PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS,2015,9(10):594-596.
APA	Li, YT,Gao, XP,Fu, LP,Yuan, P,Wang, H,&Tao, CL.(2015).Improvement of resistive switching fluctuations by using one step lift-off process.PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS,9(10),594-596.
MLA	Li, YT,et al."Improvement of resistive switching fluctuations by using one step lift-off process".PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS 9.10(2015):594-596.