HIGH-RATE EPITAXIAL-GROWTH OF DIAMOND ON SI(100) BY DC PLASMA CVD

	HIGH-RATE EPITAXIAL-GROWTH OF DIAMOND ON SI(100) BY DC PLASMA CVD
刊名	PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
	1991-12-16
卷号	128 期号:2 页码:K83-K87
ISSN号	0031-8965
通讯作者	WANG, WL (reprint author), LANZHOU UNIV,DEPT PHYS,LANZHOU 730000,PEOPLES R CHINA.
学科主题	Materials Science; Physics
语种	英语
WOS记录号	WOS:A1991HB32600035
内容类型	期刊论文
源URL	[http://202.201.7.4/handle/262010/106299]
专题	物理科学与技术学院_期刊论文
推荐引用方式 GB/T 7714	. HIGH-RATE EPITAXIAL-GROWTH OF DIAMOND ON SI(100) BY DC PLASMA CVD[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH,1991,128(2):K83-K87.
APA	(1991).HIGH-RATE EPITAXIAL-GROWTH OF DIAMOND ON SI(100) BY DC PLASMA CVD.PHYSICA STATUS SOLIDI A-APPLIED RESEARCH,128(2),K83-K87.
MLA	"HIGH-RATE EPITAXIAL-GROWTH OF DIAMOND ON SI(100) BY DC PLASMA CVD".PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 128.2(1991):K83-K87.