Growth of controlled thickness graphene by ion implantation for field-effect transistor

	Growth of controlled thickness graphene by ion implantation for field-effect transistor
	Wang, G; Ding, GQ; Zhu, Y; Chen, D; Ye, L; Zheng, L; Zhang, M; Di, ZF; Liu, S
刊名	MATERIALS LETTERS
	2013-09-15
卷号	107 页码:170-173
关键词	Graphene Raman Controlled thickness Electrical properties Semiconductors
ISSN号	0167-577X
通讯作者	Liu, S (reprint author), Lanzhou Univ, Sch Phys Sci & Technol, 222 Tianshui, Lanzhou 730000, Peoples R China.
学科主题	Materials Science; Physics
语种	英语
WOS记录号	WOS:000323240300048
内容类型	期刊论文
源URL	[http://202.201.7.4/handle/262010/105897]
专题	物理科学与技术学院_期刊论文
推荐引用方式 GB/T 7714	Wang, G,Ding, GQ,Zhu, Y,et al. Growth of controlled thickness graphene by ion implantation for field-effect transistor[J]. MATERIALS LETTERS,2013,107:170-173.
APA	Wang, G.,Ding, GQ.,Zhu, Y.,Chen, D.,Ye, L.,...&Liu, S.(2013).Growth of controlled thickness graphene by ion implantation for field-effect transistor.MATERIALS LETTERS,107,170-173.
MLA	Wang, G,et al."Growth of controlled thickness graphene by ion implantation for field-effect transistor".MATERIALS LETTERS 107(2013):170-173.