ENHANCEMENT EFFECT OF THE DEMBER FIELD IN FORWARD SEMICONDUCTOR p(+)-n JUNCTIONS

	ENHANCEMENT EFFECT OF THE DEMBER FIELD IN FORWARD SEMICONDUCTOR p(+)-n JUNCTIONS
刊名	MODERN PHYSICS LETTERS B
	2012-06-30
卷号	26 期号:16 页码:-
关键词	Ambipolar current transport the Dember field p-n junction
ISSN号	0217-9849
通讯作者	Cai, XY (reprint author), Lanzhou Univ, Sch Phys Sci & Technol, Inst Microelect, Lanzhou 730000, Peoples R China.
学科主题	Physics
语种	英语
WOS记录号	WOS:000304605300007
内容类型	期刊论文
源URL	[http://202.201.7.4/handle/262010/105537]
专题	物理科学与技术学院_期刊论文
推荐引用方式 GB/T 7714	. ENHANCEMENT EFFECT OF THE DEMBER FIELD IN FORWARD SEMICONDUCTOR p(+)-n JUNCTIONS[J]. MODERN PHYSICS LETTERS B,2012,26(16):-.
APA	(2012).ENHANCEMENT EFFECT OF THE DEMBER FIELD IN FORWARD SEMICONDUCTOR p(+)-n JUNCTIONS.MODERN PHYSICS LETTERS B,26(16),-.
MLA	"ENHANCEMENT EFFECT OF THE DEMBER FIELD IN FORWARD SEMICONDUCTOR p(+)-n JUNCTIONS".MODERN PHYSICS LETTERS B 26.16(2012):-.