Top contact organic field effect transistors fabricated using a photolithographic process

	Top contact organic field effect transistors fabricated using a photolithographic process
	Wang, H; Ji, ZY; Shang, LW; Liu, XH; Peng, YQ; Liu, M
刊名	CHINESE PHYSICS B
	2011-08
卷号	20 期号:8 页码:-
关键词	organic field effect transistors top contact photolithographic
ISSN号	1674-1056
通讯作者	Peng, YQ (reprint author), Lanzhou Univ, Sch Phys Sci & Technol, Inst Microelect, Lanzhou 730000, Peoples R China.
学科主题	Physics
语种	英语
WOS记录号	WOS:000294810700059
内容类型	期刊论文
源URL	[http://202.201.7.4/handle/262010/105361]
专题	物理科学与技术学院_期刊论文
推荐引用方式 GB/T 7714	Wang, H,Ji, ZY,Shang, LW,et al. Top contact organic field effect transistors fabricated using a photolithographic process[J]. CHINESE PHYSICS B,2011,20(8):-.
APA	Wang, H,Ji, ZY,Shang, LW,Liu, XH,Peng, YQ,&Liu, M.(2011).Top contact organic field effect transistors fabricated using a photolithographic process.CHINESE PHYSICS B,20(8),-.
MLA	Wang, H,et al."Top contact organic field effect transistors fabricated using a photolithographic process".CHINESE PHYSICS B 20.8(2011):-.