Abnormal crystallization of silicon thin films deposited by ICP-CVD

	Abnormal crystallization of silicon thin films deposited by ICP-CVD
	Li, JS; Yin, M; Wang, JX; He, DY
刊名	CHINESE PHYSICS LETTERS
	2005-12
卷号	22 期号:12 页码:3130-3132
ISSN号	0256-307X
通讯作者	He, DY (reprint author), Lanzhou Univ, Dept Phys, Lanzhou 730000, Peoples R China.
学科主题	Physics
语种	英语
WOS记录号	WOS:000233799600041
内容类型	期刊论文
源URL	[http://202.201.7.4/handle/262010/103999]
专题	物理科学与技术学院_期刊论文
推荐引用方式 GB/T 7714	Li, JS,Yin, M,Wang, JX,et al. Abnormal crystallization of silicon thin films deposited by ICP-CVD[J]. CHINESE PHYSICS LETTERS,2005,22(12):3130-3132.
APA	Li, JS,Yin, M,Wang, JX,&He, DY.(2005).Abnormal crystallization of silicon thin films deposited by ICP-CVD.CHINESE PHYSICS LETTERS,22(12),3130-3132.
MLA	Li, JS,et al."Abnormal crystallization of silicon thin films deposited by ICP-CVD".CHINESE PHYSICS LETTERS 22.12(2005):3130-3132.