Quasi-one-dimensional (Q1D) organic Mott insulators based on bent donor molecule EDO-EDSe-TTFVS

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	Quasi-one-dimensional (Q1D) organic Mott insulators based on bent donor molecule EDO-EDSe-TTFVS
刊名	SYNTHETIC METALS
	2012-12-31
卷号	162 期号:24
关键词	Bent donor molecule Q1D organic conductor Mott insulator
ISSN号	0379-6779
通讯作者	Shao, XF (reprint author), Lanzhou Univ, State Key Lab Appl Organ Chem, Lanzhou 730000, Gansu, Peoples R China.
学科主题	Materials Science ; Physics ; Polymer Science
资助信息	National Natural Science Foundation of China [21003067, 21172104]; Fundamental Research Funds for the Central Universities [lzujbky-2010-105]
语种	英语
WOS记录号	WOS:000315248400025
内容类型	期刊论文
源URL	[http://202.201.7.4:8080/handle/262010/75380]
专题	化学化工学院_期刊论文
推荐引用方式 GB/T 7714	. Quasi-one-dimensional (Q1D) organic Mott insulators based on bent donor molecule EDO-EDSe-TTFVS[J]. SYNTHETIC METALS,2012,162(24).
APA	(2012).Quasi-one-dimensional (Q1D) organic Mott insulators based on bent donor molecule EDO-EDSe-TTFVS.SYNTHETIC METALS,162(24).
MLA	"Quasi-one-dimensional (Q1D) organic Mott insulators based on bent donor molecule EDO-EDSe-TTFVS".SYNTHETIC METALS 162.24(2012).