Broadband photovoltaic effect of n-type topological insulator Bi2Te3 films on p-type Si substrates

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	Broadband photovoltaic effect of n-type topological insulator Bi2Te3 films on p-type Si substrates
	Wang, Zhenhua ; Li, Mingze ; Yang, Liang ; Zhang, Zhidong ; Gao, Xuan P. A.
刊名	NANO RESEARCH
	2017-06-01
卷号	10 期号:6 页码:1872-1879
关键词	photovoltaic effect topological insulators Bi2Te3/Si film
ISSN号	1998-0124
通讯作者	Zhang, ZD (reprint author), Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Peoples R China. ; Zhang, ZD (reprint author), Univ Sci & Technol China, Sch Mat Sci & Engn, 96 Jinzhai Rd, Hefei 230026, Peoples R China. ; Gao, XPA (reprint author), Case Western Reserve Univ, Dept Phys, Cleveland, OH 44106 USA.
中文摘要	We report the photovoltaic effects of n-type topological insulator (TI) Bi2Te3 films grown on p-type Si substrates by chemical vapor deposition (CVD). The films containing large nanoplates with a smooth surface formed on p-Si exhibit good p-n diode characteristics under dark and light illumination conditions and display a good photovoltaic effect under the broadband range from ultraviolet (UV) to near infrared (NIR) wavelengths. Under the light illumination with a wavelength of 1,000 nm, a short circuit current (I-SC) of 19.2 mu A and an open circuit voltage (V-OC) of 235 mV are achieved. The maximum fill factor (FF) increases with a decrease in the wavelength or light density, achieving a value of 35.6% under 600 nm illumination. The photoresponse of the n-Bi2Te3/p-Si device can be effectively switched between the on and off modes in millisecond time scale. These findings are important for both the fundamental understanding and solar cell device applications of TI materials.
学科主题	Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
收录类别	SCI
资助信息	National Natural Science Foundation of China [51522104, 51590883, 51331006, KJZD-EW-M05-3]; NSF CAREER [DMR-1151534]
语种	英语
公开日期	2017-08-17
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/78121]
专题	金属研究所_中国科学院金属研究所
推荐引用方式 GB/T 7714	Wang, Zhenhua,Li, Mingze,Yang, Liang,et al. Broadband photovoltaic effect of n-type topological insulator Bi2Te3 films on p-type Si substrates[J]. NANO RESEARCH,2017,10(6):1872-1879.
APA	Wang, Zhenhua,Li, Mingze,Yang, Liang,Zhang, Zhidong,&Gao, Xuan P. A..(2017).Broadband photovoltaic effect of n-type topological insulator Bi2Te3 films on p-type Si substrates.NANO RESEARCH,10(6),1872-1879.
MLA	Wang, Zhenhua,et al."Broadband photovoltaic effect of n-type topological insulator Bi2Te3 films on p-type Si substrates".NANO RESEARCH 10.6(2017):1872-1879.