n(+)Si/pGe Heterojunctions Fabricated by Low Temperature Ribbon Bonding With Passivating Interlayer

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	n(+)Si/pGe Heterojunctions Fabricated by Low Temperature Ribbon Bonding With Passivating Interlayer
	Liu, Tony Chi ; Kabuyanagi, Shoichi ; Nishimura, Tomonori ; Yajima, Takeaki ; Toriumi, Akira
刊名	IEEE ELECTRON DEVICE LETTERS
	2017-06-01
卷号	38 期号:6 页码:716-719
关键词	Germanium heterojunctions passivation interlayer bonding
ISSN号	0741-3106
通讯作者	Liu, TC (reprint author), Univ Tokyo, Dept Mech Engn, Tokyo 1138656, Japan.
中文摘要	A bonding technique via passivating interlayer formation is proposed for bulkmaterial heterojunction fabrication. n(+)Si/pGe heterojunctions were fabricated by a ribbon bonding with interfaces passivated by an amorphous interlayer. With a highest process temperature as low as 150. degrees C, the bonded junctions exhibited rectifying characteristics with a turn-on voltage of 0.3 V as an ideal Si/Ge heterojunction and an ideality factor of 2.15. This technique shows a great potential for bulk material heterojunction formation, especially when ultimately abrupt junctions and low temperature processes are needed.
学科主题	Engineering, Electrical & Electronic
收录类别	SCI
语种	英语
公开日期	2017-08-17
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/78113]
专题	金属研究所_中国科学院金属研究所
推荐引用方式 GB/T 7714	Liu, Tony Chi,Kabuyanagi, Shoichi,Nishimura, Tomonori,et al. n(+)Si/pGe Heterojunctions Fabricated by Low Temperature Ribbon Bonding With Passivating Interlayer[J]. IEEE ELECTRON DEVICE LETTERS,2017,38(6):716-719.
APA	Liu, Tony Chi,Kabuyanagi, Shoichi,Nishimura, Tomonori,Yajima, Takeaki,&Toriumi, Akira.(2017).n(+)Si/pGe Heterojunctions Fabricated by Low Temperature Ribbon Bonding With Passivating Interlayer.IEEE ELECTRON DEVICE LETTERS,38(6),716-719.
MLA	Liu, Tony Chi,et al."n(+)Si/pGe Heterojunctions Fabricated by Low Temperature Ribbon Bonding With Passivating Interlayer".IEEE ELECTRON DEVICE LETTERS 38.6(2017):716-719.