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Defects and electrical properties of crystalline silicon at different metallurgical route
Lai, Hui Xian ; Huang, Liu Qing ; Fang, Ming ; Lu, Cheng Hao ; Chen, Juan ; Yu, De Qin ; Li, Jin Tang ; Ma, Wen Hui ; Shen, Jian Ning ; Sheng, Zhi Lin ; Luo, Xue Tao ; Luo XT(罗学涛)
2013
关键词Defects Dislocations (crystals) Electric conductivity Feedstocks Ingots Mechanical engineering Metallurgy Refining Silicon Slags Vacuum
英文摘要Conference Name:2nd International Conference on Recent Trends in Materials and Mechanical Engineering, ICRTMME 2013. Conference Address: Singapore. Time:September 21, 2013 - September 23, 2013.; Singapore Management and Sports Science Institute; To investigate the effects of the metallurgical route on the defects in mc-Si, various metallurgical routes were conducted. Dislocation formation and the resistivity of the mc-Si were also studied. The results showed that high inhomogeneity in dislocation distribution within individual grains and paralleled tacking faults could be observed when the ingot was grown by using the feedstock prepared by adopting the sequence of slag treatment, acid leaching and vacuum refining. Different grains have various dislocation density, which was showed in ingot grown by utilizing the feedstock prepared by adopting the sequence of vacuum refining, slag treatment and acid leaching, tacking faults could also be seen, as well as some dislocation clusters. The resistivity of this two ingots was detected at various height by using the a 4-point probe silicon tester, it was expected that the resistivity of these two ingots has the same tendency of the change, and the value of the resistivity of the ingot obtained using the previous technology was relatively higher than that of the ingot obtained using the latter technology. ? (2013) Trans Tech Publications, Switzerland.
语种英语
出处http://dx.doi.org/10.4028/www.scientific.net/AMM.420.134
出版者Trans Tech Publications Ltd
内容类型其他
源URL[http://dspace.xmu.edu.cn/handle/2288/85120]  
专题材料学院-会议论文
推荐引用方式
GB/T 7714
Lai, Hui Xian,Huang, Liu Qing,Fang, Ming,et al. Defects and electrical properties of crystalline silicon at different metallurgical route. 2013-01-01.
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