QQ客服 官方微博 反馈留言

	Effect of the intrinsic layer thickness on the spectral performance of p-i-n structure 4H-SIC ultraviolet photodetector
	Chen, Xiaping ; Wu, Zhengyun ; Zhu, Huili ; Chen SP(陈厦平) ; Wu ZY(吴正云)
	2011
关键词	Civil engineering Optoelectronic devices Photodetectors Remote sensing
英文摘要	Conference Name:2011 International Conference on Remote Sensing, Environment and Transportation Engineering, RSETE 2011. Conference Address: Nanjing, China. Time:June 24, 2011 - June 26, 2011.; Nanjing University of Information Science and Technology; Peking University; Fudan University; Tsinghua University; Jilin University; The absorption coefficients of 4H-SiC at 200-400 nm were obtained by extrapolation and polynomial fitting methods. Considering the effect of different junction-depth on the spectral performance, the continuity equations of photogenerated minority carrier were used to theoretically calculate the responsivity of p+-n-(i)-n-n+ structure 4H-SiC ultraviolet photodetector (PD) and to find out the effect of the intrinsic layer thickness on the spectral performance. The theoretical analyses can be applied to the practical design of p-i-n structure 4H-SiC PDs. ? 2011 IEEE.
语种	英语
出处	http://dx.doi.org/10.1109/RSETE.2011.5965701
出版者	IEEE Computer Society
内容类型	其他
源URL	[http://dspace.xmu.edu.cn/handle/2288/86364]
专题	物理技术－会议论文
推荐引用方式 GB/T 7714	Chen, Xiaping,Wu, Zhengyun,Zhu, Huili,et al. Effect of the intrinsic layer thickness on the spectral performance of p-i-n structure 4H-SIC ultraviolet photodetector. 2011-01-01.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。