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	Low temperature wafer direct bonding using wet chemical treatment
	Zhao, Yanli ; Song, Zijun ; Li, Yan ; San, Haisheng ; Yu, Yuxi ; San HS(伞海生) ; Yu YX(余煜玺)
	2012
关键词	Bonding Chemical activation Chemical industry Manufacture Silicon oxides Silicon wafers Temperature Tensile testing
英文摘要	Conference Name:3rd international Conference on Manufacturing Science and Engineering, ICMSE 2012. Conference Address: Xiamen, China. Time:March 27, 2012 - March 29, 2012.; Fujian University of Technology; Xiamen University; Fuzhou University; Huaqiao University; University of Wollongong; In this paper, the low-temperature (less than or equal to 400 掳C) silicon wafer direct bonding technology using wet chemical surface treatment is proposed. For bonded pairs of silicon-oxide-covered wafers, the optimum process condition is established with respect to the experimental results of two different wet chemical processing methods. The bonding quality is evaluated through infrared transmission test and tensile test. Experimental results indicate that the bonding strength of the additional 29% NH3 middot;H2O treated samples is about 7.2 MPa, while it is no more than 3.1 MPa for the only piranha (H2SO4/H2O 2) solution and RCA1 (NH3·H2O/H 2O2/H2O) solution cleaned samples. Effect of the pulling speed on tensile test is also investigated. The results show that the pulling speed effect should be considered during the tensile test. 漏 (2012) Trans Tech Publications, Switzerland.
语种	英语
出处	http://dx.doi.org/10.4028/www.scientific.net/AMR.482-484.2381
出版者	Trans Tech Publications
内容类型	其他
源URL	[http://dspace.xmu.edu.cn/handle/2288/86223]
专题	物理技术－会议论文
推荐引用方式 GB/T 7714	Zhao, Yanli,Song, Zijun,Li, Yan,et al. Low temperature wafer direct bonding using wet chemical treatment. 2012-01-01.

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