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Direct generation of Ince-Gaussian beam in Cr, Nd:YAG self-Q-switched microchip laser
Dong, J ; Zhou, Xiao ; Xu, Guozhang ; Dong J(董俊)
2013
关键词Gaussian beams Q switched lasers Q switching
英文摘要Conference Name:10th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013. Conference Address: Kyoto, Japan. Time:June 30, 2013 - July 4, 2013.; IEICE Communications Society (IEICE CS); IEICE Electronics Society (IEICE ES); The Japan Society of Applied Physics; Agilent Technologies Japan, Ltd.; Hamamatsu Photonics K.K.; Direct generation of higher-order Ince-Gaussian (IG) beams in laser-diode end-pumped Cr, Nd:YAG self-Q-switched microchip laser was achieved with high efficiency and high repetition rate. ? 2013 IEEE.
语种英语
出处http://dx.doi.org/10.1109/CLEOPR.2013.6599935
出版者Institute of Electrical and Electronics Engineers Inc.
内容类型其他
源URL[http://dspace.xmu.edu.cn/handle/2288/86654]  
专题信息技术-会议论文
推荐引用方式
GB/T 7714
Dong, J,Zhou, Xiao,Xu, Guozhang,et al. Direct generation of Ince-Gaussian beam in Cr, Nd:YAG self-Q-switched microchip laser. 2013-01-01.
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