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	金属与半导体Ge欧姆接触制备、性质及其机理分析; Properties and mechanism analysis of metal/Ge ohmic contact
	严光明 ; 李成 ; 汤梦饶 ; 黄诗浩 ; 王尘 ; 卢卫芳 ; 黄巍 ; 赖虹凯 ; 陈松岩
	2013-08-23
关键词	金属与Ge接触性质 NiGe 比接触电阻率 metal/Ge contact NiGe specific contact resistance
英文摘要	金属与gE材料接触时界面处存在着强烈的费米钉扎效应,尤其与n型gE形成的欧姆接触的比接触电阻率高,是制约SI基gE器件性能的关键因素之一.本文对比了分别采用金属Al和nI与SI衬底上外延生长的P型gE和n型gE材料的接触特性.发现在相同的较高掺杂条件下,nIgE与n型gE可形成良好的欧姆接触,其比接触电阻率较Al接触降低了一个数量级,掺P浓度为2x1019CM-3时达到1.43x10-5·CM2.nIgE与P型gE接触和Al接触的比接触电阻率相当,掺b浓度为4.2x1018CM-3时达到1.68x10-5·CM2.nIgE与n型gE接触和Al电极相比较,在形成nIgE过程中,P杂质在界面处的偏析是其接触电阻率降低的主要原因.采用nIgE作为gE的接触电极在目前是合适的选择.; Large contact resistance due to Fermi level pinning effect at the interface between metal and n-type Ge strongly restricts the performance of Ge device on Si substrate.In this paper, the contacts of metal Al and Ni with n-type Ge and p-type Ge epitaxial layers grown by UHV/CVD are comparatively studied.It is found that the contact of NiGe/n-Ge is better than that of Al/n-Ge at the same dopant concentration.When the concentration of P is 2×1019 cm-3 , the ohmic contact of NiGe/n-Ge with ρc down to 1.43×10-5·cm2 is demomstrated, which is about one order of magnitude lower than that of Al/n-Ge contact.The specific contact resistance of NiGe/p-Ge is 1.68×10-5·cm2 when the B concentration is 4.2×1018 cm-3 , corresponding to that of Al/p-Ge.Compared with Al/n-Ge contact, P segregation at the interface between NiGe and Ge, rather than lowering Schottky barrier height, is the main reseaon for achieving the low specific contact resistance.NiGe/Ge contact should be a good choice for contact electrode for Ge devices at present.; 国家重点基础研究发展计划(批准号:2012CB933503;2013CB632103); 国家自然科学基金(批准号:61036003;61176092); 中央高校基本科研业务费(批准号:2010121056)资助的课题~~
语种	zh_CN
内容类型	期刊论文
源URL	[http://dspace.xmu.edu.cn/handle/2288/121501]
专题	物理技术－已发表论文
推荐引用方式 GB/T 7714	严光明,李成,汤梦饶,等. 金属与半导体Ge欧姆接触制备、性质及其机理分析, Properties and mechanism analysis of metal/Ge ohmic contact[J],2013.
APA	严光明.,李成.,汤梦饶.,黄诗浩.,王尘.,...&陈松岩.(2013).金属与半导体Ge欧姆接触制备、性质及其机理分析..
MLA	严光明,et al."金属与半导体Ge欧姆接触制备、性质及其机理分析".(2013).

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