| Si基Ge波导光电探测器的制备和特性研究; Fabrication and characteristics of Si-based Ge waveguide photodetectors | |
| 陈荔群 ; 周志文 ; 李成 ; 赖虹凯 ; 陈松岩 | |
| 2009 | |
| 关键词 | Ge 波导 光电探测器 germanium waveguide photodetector |
| 英文摘要 | 以外延gE薄膜为吸收区,在SI基上制备了gE波导光电探测器。利用超高真空化学汽相淀积(uHV/CVd)设备,采取低温高温两步法,在SI(100)衬底上外延出厚度约为500nM的高质量纯gE层。探测器采用脊型波导结构,Al电极分别制作在波导的台面上下形成背对背肖特基结。I-V特性测试表明,在-1V偏压下,暗电流密度为0.2MA/CM2。由于SI与gE热失配引起外延的gE薄膜受到0.2%张应变,减小了gE带隙,光响应波长范围扩展到1.60μM以上。在70MW、1.55μM入射光照射下,测得光电流比暗电流高出近1个数量级。; A Si-based Ge waveguide photodetector was fabricated and characterized.High-quality tensile strained Ge layer(about 500nm)was epitaxially grown on a Si(100)substrate by low-and high-temperature two-step growth method in ultrahigh vacuum chemical vapor deposition.Two metal-germanium schottky junctions on and under the waveguide were fabricated to form metal-germanium-metal photodetector and the dark current density of 0.2 mA/cm2 at the bias of-1 V is obtained.The photocurrent response in the wavelength range expands to 1.6 μm due to the 0.2% tensile strain in the Ge layer and the photocurrent is higher in one order magnitude than the dark current at 1.55 μm.; 国家自然科学基金资助项目(60676027);国家重点基础研究发展计划“973”资助项目(2007CB613404);国家自然科学基金委重点基金资助项目(60837001);福建省重点科技资助项目(2006H0036) |
| 语种 | zh_CN |
| 内容类型 | 期刊论文 |
| 源URL | [http://dspace.xmu.edu.cn/handle/2288/121267]  |
| 专题 | 物理技术－已发表论文 |
| 推荐引用方式 GB/T 7714 | 陈荔群,周志文,李成,等. Si基Ge波导光电探测器的制备和特性研究, Fabrication and characteristics of Si-based Ge waveguide photodetectors[J],2009. |
| APA | 陈荔群,周志文,李成,赖虹凯,&陈松岩.(2009).Si基Ge波导光电探测器的制备和特性研究.. |
| MLA | 陈荔群,et al."Si基Ge波导光电探测器的制备和特性研究".(2009). |
| 个性服务 |
| 查看访问统计 |
| 相关权益政策 |
| 暂无数据 |
| 收藏/分享 |
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。
修改评论