High-performance 4H-SiC-based p-i-n ultraviolet photodiode and investigation of its capacitance characteristics

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	High-performance 4H-SiC-based p-i-n ultraviolet photodiode and investigation of its capacitance characteristics
	Cai, Jiafa ; Chen, Xiaping ; Hong, Rongdun ; Yang, Weifeng ; Wu, Zhengyun ; Chen SP(陈厦平) ; Hong RD(洪荣墩) ; Wu ZY(吴正云)
刊名	http://dx.doi.org/10.1016/j.optcom.2014.07.071
	2014
关键词	Capacitance Silicon carbide
英文摘要	We report on high-performance 4H-SiC-based p-i-n ultraviolet (UV) photodiodes and investigation of the capacitance characteristics. The fabricated p-i-n photodiode exhibits a large UV-to-visible rejection ratio (R266 nm/R380 nm) while displaying a low dark current and a high responsivity at room temperature. Interestingly, even at 450 k, the photodiode presents a high responsivity of 0.15 A/W and high UV-to-visible rejection ratio more than 200. Capacitance-voltage measurements reveal that the 4H-SiC p-i-n photodiode presents strong frequency-, temperature-, and wavelength-dependent capacitance properties. These results indicate that the advances on the 4H-SiC material and the p-i-n junction offer exciting opportunities for important UV detection in a variety of commercial and military fields. ? 2014 Elsevier B.V. All rights reserved.
语种	英语
出版者	Elsevier
内容类型	期刊论文
源URL	[http://dspace.xmu.edu.cn/handle/2288/92236]
专题	物理技术－已发表论文
推荐引用方式 GB/T 7714	Cai, Jiafa,Chen, Xiaping,Hong, Rongdun,et al. High-performance 4H-SiC-based p-i-n ultraviolet photodiode and investigation of its capacitance characteristics[J]. http://dx.doi.org/10.1016/j.optcom.2014.07.071,2014.
APA	Cai, Jiafa.,Chen, Xiaping.,Hong, Rongdun.,Yang, Weifeng.,Wu, Zhengyun.,...&吴正云.(2014).High-performance 4H-SiC-based p-i-n ultraviolet photodiode and investigation of its capacitance characteristics.http://dx.doi.org/10.1016/j.optcom.2014.07.071.
MLA	Cai, Jiafa,et al."High-performance 4H-SiC-based p-i-n ultraviolet photodiode and investigation of its capacitance characteristics".http://dx.doi.org/10.1016/j.optcom.2014.07.071 (2014).