Germanium n+/p shallow junction with record rectification ratio formed by low-temperature preannealing and excimer laser annealing

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	Germanium n+/p shallow junction with record rectification ratio formed by low-temperature preannealing and excimer laser annealing
	Wang, Chen ; Li, Cheng ; Lin, Guangyang ; Lu, Weifang ; Wei, Jiangbin ; Huang, Wei ; Lai, Hongkai ; Chen, Songyan ; Di, Zengfeng ; Zhang, Miao ; Li C(李成) ; Huang W(黄巍) ; Lai HK(赖虹凯) ; Chen SY(陈松岩)
刊名	http://dx.doi.org/10.1109/TED.2014.2332461
	2014
关键词	Annealing Excimer lasers MOSFET devices Phosphorus Temperature
英文摘要	A germanium n+/p shallow junction formed by a combination of low-temperature preannealing (LTPA) and excimer laser annealing at a low fluence of 150 mJ/cm2 for phosphorus-implanted germanium is demonstrated. The LTPA step plays a critical role in annihilating the implantation damages and significantly suppressing phosphorus diffusion during laser annealing process, resulting in a very small dopant diffusion length with high activation level of phosphorus. A well-behaved Ge n+/p shallow junction diode with a record rectification ratio of ～ 107 and low leakage current density of (8.3 × 10-5) A/cm2 is achieved, which is greatly beneficial to the scaled Ge MOSFET technology. ? 2014 IEEE.
语种	英语
出版者	Institute of Electrical and Electronics Engineers Inc.
内容类型	期刊论文
源URL	[http://dspace.xmu.edu.cn/handle/2288/92226]
专题	物理技术－已发表论文
推荐引用方式 GB/T 7714	Wang, Chen,Li, Cheng,Lin, Guangyang,et al. Germanium n+/p shallow junction with record rectification ratio formed by low-temperature preannealing and excimer laser annealing[J]. http://dx.doi.org/10.1109/TED.2014.2332461,2014.
APA	Wang, Chen.,Li, Cheng.,Lin, Guangyang.,Lu, Weifang.,Wei, Jiangbin.,...&陈松岩.(2014).Germanium n+/p shallow junction with record rectification ratio formed by low-temperature preannealing and excimer laser annealing.http://dx.doi.org/10.1109/TED.2014.2332461.
MLA	Wang, Chen,et al."Germanium n+/p shallow junction with record rectification ratio formed by low-temperature preannealing and excimer laser annealing".http://dx.doi.org/10.1109/TED.2014.2332461 (2014).